Open AccessBook
Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
Tsunenobu Kimoto,James A. Cooper +1 more
TLDR
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications is provided in this paper. But the authors focus on the SiC Schottky barrier diodes (SBDs) and do not provide an in-depth reference for scientists and engineers working in this field.Abstract:
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field . Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:read more
Citations
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Journal ArticleDOI
Light-emitting diodes
TL;DR: Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
Material platforms for spin-based photonic quantum technologies
TL;DR: In this paper, the authors highlight the progress in three leading material platforms: diamond, silicon carbide and atomically thin semiconductors, with a focus on applications in quantum networks.
Journal ArticleDOI
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Fabrizio Roccaforte,Patrick Fiorenza,Giuseppe Greco,Raffaella Lo Nigro,Filippo Giannazzo,Ferdinando Iucolano,Mario Saggio +6 more
TL;DR: In this article, the authors review some emerging trends in the processing of wide band gap (WBG) semiconductor devices (e.g., diodes, MOSFETs, HEMTs, etc.).
References
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Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Journal ArticleDOI
The theory of p-n junctions in semiconductors and p-n junction transistors
TL;DR: The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium, resulting in an admittance for a simple case varying as (1 + iωτ p )1/2 where τ p is the lifetime of a hole in the n-region.
BookDOI
Fundamentals of Power Semiconductor Devices
TL;DR: In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.
Journal ArticleDOI
Light-emitting diodes
TL;DR: Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Book
Principles of power electronics
TL;DR: In this paper, the authors present a review of semiconductor devices and their properties, including gate and base drives, and power transistors, as well as feedback control design and an overview of ancillary issues.