T
Tsunenobu Kimoto
Researcher at Kyoto University
Publications - 635
Citations - 15807
Tsunenobu Kimoto is an academic researcher from Kyoto University. The author has contributed to research in topics: Silicon carbide & Diode. The author has an hindex of 58, co-authored 622 publications receiving 13668 citations. Previous affiliations of Tsunenobu Kimoto include Eötvös Loránd University & Sumitomo Electric Industries.
Papers
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Material science and device physics in SiC technology for high-voltage power devices
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Book
Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
Tsunenobu Kimoto,James A. Cooper +1 more
TL;DR: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications is provided in this paper. But the authors focus on the SiC Schottky barrier diodes (SBDs) and do not provide an in-depth reference for scientists and engineers working in this field.
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Step-controlled epitaxial growth of SiC: High quality homoepitaxy
TL;DR: In this paper, a step-controlled epitaxial growth of silicon carbide (SiC) is proposed, which utilizes step-flow growth on off-oriented SiC{0001} substrates, and the detailed growth mechanism is discussed.
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Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
Thomas Dalibor,Gerhard Pensl,Hiroyuki Matsunami,Tsunenobu Kimoto,Wolfgang J. Choyke,Adolf Schöner,Nils Nordell +6 more
TL;DR: In this paper, deep level transient spectroscopy investigations on deep defect centers in 3C, 4H, and 6H SiC polytypes are reviewed and an emphasis is put on intrinsic defect centers observed in as-grown material and subsequent to ion implantation or electron irradiation as well as on defect centers caused by doping with or implantation of transition metals (vanadium, titanium, chromium, and scandium).
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Power Conversion With SiC Devices at Extremely High Ambient Temperatures
Tsuyoshi Funaki,Juan Carlos Balda,J. Junghans,Avinash Srikrishnan Kashyap,Homer Alan Mantooth,Fred Barlow,Tsunenobu Kimoto,Takashi Hikihara +7 more
TL;DR: In this article, the capability of SiC power semiconductor devices, in particular JFET and Schottky barrier diodes (SBDs), for application in high-temperature power electronics was evaluated.