Y
Yuchao Yang
Researcher at Peking University
Publications - 146
Citations - 8909
Yuchao Yang is an academic researcher from Peking University. The author has contributed to research in topics: Neuromorphic engineering & Memristor. The author has an hindex of 34, co-authored 118 publications receiving 6533 citations. Previous affiliations of Yuchao Yang include Tsinghua University & University of Michigan.
Papers
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Observation of conducting filament growth in nanoscale resistive memories
TL;DR: It is found that the filament growth can be dominated by cation transport in the dielectric film, and two different growth modes were observed for the first time in materials with different microstructures.
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Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.
TL;DR: The Ag/ZnO:Mn/Pt device represents an ultrafast and highly scalable memory element for developing next generation nonvolatile memories and a model concerning redox reaction mediated formation and rupture of Ag bridges is suggested to explain the memory effect.
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Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films
TL;DR: In this paper, the magnetic properties and intrinsic ferromagnetism of transition-metal (TM)-doped ZnO films, which are typical diluted magnetic oxides used in spintronics, are discussed.
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Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Yuchao Yang,Peng Gao,Peng Gao,Linze Li,Xiaoqing Pan,Stefan Tappertzhofen,Shinhyun Choi,Rainer Waser,Ilia Valov,Wei Lu +9 more
TL;DR: It is demonstrated that nanoscale inclusions in dielectrics dynamically change their shape, size and position upon applied electric field, revealing the microscopic origin behind resistive switching, and providing general guidance for the design of novel devices involving electronics and ionics.
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Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.