ABB Ltd

About: ABB Ltd is a company organization based out in Zurich, Switzerland. It is known for research contribution in the topics: Voltage & Signal. The organization has 6222 authors who have published 6852 publications receiving 83994 citations.

Device for the electrical and mechanical connection of the component conductors for supplying and removing the coolant

Abstract: In the connecting device for the electrical and mechanical connection of component conductors and for the supply or removal of the coolant to or from the hollow conductors (5) of the stator winding bars (3) of electrical machines, the hollow conductors (5) and, optionally, the solid conductors (4) of the winding bar in the winding head are held together in a metallic component (7) This component is connected to a water chamber (2) which is in turn provided with connecting fittings (6, 11) for the supply or removal of the coolant and is surrounded by an insulating jacket (10) Hitherto the production and assembly of said insulating jackets was very time-consuming In order to shorten the assembly time, the insulating jacket comprises a preferably U-shaped insulating part (10) which is pushed over the metallic component (7), the water chamber (2) and the connecting fittings (6, 11) from the inside and overlaps the latter radially Means (17, 19 and 12a, 12b) for filling the spaces between the metallic component and the U-shaped insulating part (7) and between the connecting fittings and the U-shaped insulating part are provided both in the region of the metallic component and in the region of the connecting fittings, which means also provide for a firm retention of the insulating jacket

Method for fault location on series compensated power transmission lines with two-end unsynchronized measurement

Abstract: The present invention is concerned with a method for fault location in series compensated power transmission lines with two-end unsynchronized measurement, finding an application in the electrical power sector and for overhead uncompensated and series-compensated transmission lines. The method according to the invention wherein a distance to fault and fault resistance are determined by means of voltages and current values, measurement in the stations (A) and (B), before and after occurrence of the fault (101), comprising the following steps: based on the assumption that fault occurs in the line section LA between station A and series capacitor and metal oxide varistor device SCM then taking into account the distributed parameter line model the distance to fault (dA) or (dB) is determined (104a, 104b) from the formula: dA = PSCdLA, dB = (1 - Psc)dLB where: dLA, dLB - denotes an hypothetical distance to fault, expressed in relation to length (Pscl) which value is received by known iterative method; then an equivalent impedance of compensating bank at fault stage (formula (I) and (II)) is calculated (105a, 105b) with using the post fault of measured voltage and currents and an equivalent impedance of compensation bank at pre-fault (ZSC1_pre) is calculated (106a, 106b) in order to determine which distance (dA) or (dB) is the final result.

Current balancing of parallel connected semiconductor components

Abstract: A method and an arrangement are provided for balancing the switching transient behavior of parallel connected power semiconductor components. The method includes providing a switch signal to the parallel connected power semiconductor components for changing the state of the components, forming control signals for each of the parallel connected components from the switch signal, and determining, during the change of state of the power semiconductor component, the voltage induced to an inductance in the main current path of the component in each of the parallel connected components. The method also includes comparing each of the induced voltages with a predetermined threshold voltage, measuring time differences between the time instants at which the induced voltages crosses the threshold voltage, and modifying one or more of the control signals on the basis of the measured time differences in the respective following state change for balancing the switching transient behavior.

SOS transistor structure

Abstract: A MOS transistor is formed in a silicon layer applied on an insulating base. The channel region of the transistor has a weakly doped region located nearest the surface of the layer and a more heavily doped region nearest the base. The latter region extends in under the source region of the transistor and is connected to the source contact of the transistor via a highly doped region of the same conduction type. The more heavily doped region is doped with a doping dose of at least 2.1012 cm-2.

Turn-off power semiconductor device

Abstract: In a turn-off power semiconductor component, particularly an MOS-controlled thyristor MCT with a multiplicity of individual MCT cells (M1,...,M3), the cell units (here: MCT cells (M1,...,M3)) are combined, in order to prevent excessive current density at the edge, group by group to form segments (SE) and are surrounded at the edge by edge short-circuit regions (10, 15) which are inserted into the semiconductor substrate (1) from the cathode side and are directly connected to the cathode contact (2). The edge short-circuit regions (10) are of the same type of conductivity as the emitter layer (8) on the anode side.