ABB Ltd

About: ABB Ltd is a company organization based out in Zurich, Switzerland. It is known for research contribution in the topics: Voltage & Signal. The organization has 6222 authors who have published 6852 publications receiving 83994 citations.

Determination and use of power system sensitivities

Abstract: The present disclosure relates to power system sensitivities as computed from power flow parameters and control parameters of a Power Flow Control Device (PFC). To this end, control parameter variations are applied to or generated by a PFC, and comprise variations in a control input u, a control effort e (injected series voltage, inserted series reactance), or a control effect q (power flow, active power transfer, phase-shift, current). A power flow response measuring unit measures a variation of a power flow response such as current, active or apparent power, in a way sufficiently synchronized with the control parameter variation to allow establishing an unambiguous causal relationship or correspondence in the form of a power system sensitivity. The latter may be on-line adapted to continuously reflect an updated aspect of the power system behaviour, and thus enable an improved, fast and reliable power flow control in power systems comprising a meshed power network with two parallel flow paths or corridors connecting two areas or sub-systems.

Method for operating a battery energy storage system

Abstract: The present invention is concerned with the operation of a battery energy storage system (BESS) connected to an electric power system. The upper and lower state-of-charge (SoC) set-points of the BESS are adapted based on the analysis of the historical frequency data of the power system. A time dependent modulation function is determined for the upper and lower SoC set-points which avoids unwanted charging and discharging events.

Optolectronic component with a welded joint and a method of mounting thereof

Abstract: An optoelectronic component includes a housing having a first body and a second, spherical body, and an optoelectronic semiconductor element mounted in the second, spherical body. The second, spherical body is adjustably journalled in a cylindrical recess of the first body. The cylindrical recess includes an opening edge and the spherical body includes a portion having substantially the same outer periphery diameter as the diameter of the cylindrical recess at the level with the opening edge of the cylindrical body. A welded joint extends around the whole opening edge to provide a hermetically sealed joint between the opening edge and that portion of the spherical body.

Power semiconductor component with transparent emitter and stop layer

Abstract: A power semiconductor component is specified which provides for a significant reduction in the thickness of the semiconductor substrate (1) whilst at the same time optimizing the switching losses. A transparent emitter (6) and a stop layer (7) are arranged to provide a thin semiconductor and optimized switching losses. The means can be used both in semiconductor switches such as IGBT, MCT or GTO and in diodes.