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TL;DR: In this article, a 6mm-thick middle-crack tension specimen made of aluminium 2524-T351 was applied to a surface treatment technique used in the aerospace sector to increase fatigue life.
55 citations
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TL;DR: Deuteronium jarosite, (D_3O)Fe_3(SO_4)_2(OD)_6, contains a kagome lattice of Heisenberg spins, S=5/2, with a coverage of 97+-1%. DC and AC susceptibility measurements show strong in-plane antiferromagnetic exchange (\theta_CW=-1500+-300K) and a spin-glass transition at T_f=13.8 K, while the magnetic contribution to the specific heat below T as T^2, characteristic
Abstract: Deuteronium jarosite, (D_3O)Fe_3(SO_4)_2(OD)_6, contains a kagome lattice of Heisenberg spins, S=5/2, with a coverage of 97+-1%. DC and AC susceptibility measurements show strong in-plane antiferromagnetic exchange (\theta_CW=-1500+-300K) and a spin-glass transition at T_f=13.8 K, while the magnetic contribution to the specific heat below T_f rises with T as T^2, characteristic of two-dimensional propagating modes. Powder neutron diffraction reveals short-range magnetic correlations (\xsi=19+-2 \AA) with a wavevector corresponding to the \sqrt{3}x\sqrt{3} spin structure at 1.9 K.
55 citations
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TL;DR: In this article, the channelling of ions in crystals is described and its application to the study of a variety of lattice defects is outlined, including the trapping of vacancies and self-interstitials by solute atoms and the identification of the resulting trapping configurations.
Abstract: The channelling of ions in crystals is described and its application to the study of a variety of lattice defects is outlined. Ions which are channelled along different crystallographic axes and planes interact with displaced atoms in distinctive ways, enabling the atomistic nature of lattice defects to be determined. Three main areas of study are considered. (a) The trapping of vacancies and self-interstitials by solute atoms and the identification of the resulting trapping configurations. (b) The displacement of host atoms from lattice sites (e.g. ion-induced amorphisation of semiconductors). (c) The relaxation and reconstruction of surfaces.
55 citations
Authors
Showing all 2298 results
Name | H-index | Papers | Citations |
---|---|---|---|
Michael D. Guiver | 78 | 288 | 20540 |
Robert J. Birgeneau | 78 | 587 | 22686 |
Mike D. Flannigan | 71 | 211 | 21327 |
Martin T. Dove | 61 | 396 | 14767 |
Luis Rodrigo | 58 | 341 | 12963 |
André Longtin | 56 | 260 | 16372 |
David Mitlin | 56 | 196 | 15479 |
John Katsaras | 55 | 220 | 9263 |
John E. Greedan | 55 | 391 | 12171 |
Gang Li | 48 | 406 | 7713 |
Matthew G. Tucker | 45 | 224 | 7288 |
Bruce D. Gaulin | 45 | 284 | 6698 |
Erick J. Dufourc | 43 | 144 | 5882 |
Norbert Kučerka | 43 | 119 | 7319 |
Stephen J. Skinner | 42 | 194 | 8522 |