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Journal ArticleDOI

A Multimode Transmitter in 0.13 $\mu\hbox{m}$ CMOS Using Direct-Digital RF Modulator

TLDR
A system-independent transmitter architecture based on a direct-digital RF-modulator which combines the D/A conversion, up-conversion, unwanted sideband rejection, power control, and part of the digital image-rejection filtering into a single mixed-signal circuit block is presented.
Abstract
This paper presents a system-independent transmitter architecture based on a direct-digital RF-modulator which combines the D/A conversion, up-conversion, unwanted sideband rejection, power control, and part of the digital image-rejection filtering into a single mixed-signal circuit block. The multimode capability of the architecture is demonstrated with WCDMA, EDGE, and WLAN system requirements. The modulator achieves 90 dB of power control range and with an external power amplifier module, WCDMA EVM of less than 2% from signal powers of -20 dBm to +25 dBm. The noise floor level defined by the quantization noise at 190 MHz offset from the carrier is -150 dBc/Hz measured at the output of the PA with +25 dBm signal power. The analog power consumption with the maximum signal power level is 92 mW and scales down to 46 mW when reducing the signal level to -43 dBFS. The digital power consumption is 65 mW. The chip is implemented with a standard 0.13 mum 1.2 V digital CMOS with total silicon area of 4 mm2.

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Citations
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Journal ArticleDOI

A 25 dBm Digitally Modulated CMOS Power Amplifier for WCDMA/EDGE/OFDM With Adaptive Digital Predistortion and Efficient Power Control

TL;DR: A digitally modulated power amplifier (DPA) in 1.2 V 0.13 mum SOI CMOS is presented, to be used as a building block in multi-standard, multi-band polar transmitters.
Journal ArticleDOI

A Zero-IF 60 GHz 65 nm CMOS Transceiver With Direct BPSK Modulation Demonstrating up to 6 Gb/s Data Rates Over a 2 m Wireless Link

TL;DR: A directly modulated, 60 GHz zero-IF transceiver architecture suitable for single-carrier, low-power, multi-gigabit wireless links in nanoscale CMOS technologies that requires no upconversion of the baseband signals in the transmitter and no analog-to-digital conversion in the receiver, thus minimizing system complexity and power consumption.
Book

High-Frequency Integrated Circuits

TL;DR: In this paper, a transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz is presented.
Patent

Power Converter With Capacitive Energy Transfer And Fast Dynamic Response

TL;DR: In this article, a reconfigurable switched capacitor transformation stage coupled to a magnetic converter (or regulation) is proposed for high power density power conversion, which can achieve high performance over a wide input voltage range or a wide output voltage range.
Proceedings ArticleDOI

A fully digital multimode polar transmitter employing 17b RF DAC in 3G mode

TL;DR: It is necessary to develop a transmitter architecture that enables use of a multimode, multiband power amplifier, a key prerequisite to substantially reduce the number of external components, pins count, and PCB area, while at the same time significantly lowering power consumption.
References
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Journal ArticleDOI

Matching properties of MOS transistors

TL;DR: In this paper, the matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured, and the matching results have been verified by measurements and calculations on several basic circuits.
Journal ArticleDOI

Matching properties of MOS transistors

TL;DR: In this article, the matching properties of the threshold voltage, substrate factor and current factor of MOS transistors have been analyzed and measured, and the matching results have been verified by measurements and calculations on a band-gap reference circuit.
Journal ArticleDOI

All-digital TX frequency synthesizer and discrete-time receiver for Bluetooth radio in 130-nm CMOS

TL;DR: In this paper, the authors present a single-chip fully compliant Bluetooth radio fabricated in a digital 130-nm CMOS process, which is compatible with digital deep-submicron CMOS processes and can be readily integrated with a digital baseband and application processor.
Journal ArticleDOI

A 10-b, 500-MSample/s CMOS DAC in 0.6 mm/sup 2/

TL;DR: In this paper, a 10-b current steering CMOS digital-to-analog converter (DAC) with optimized performance for frequency domain applications is described, where the spurious free dynamic range (SFDR) is better than 60 dB for signals from DC to Nyquist.
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