An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
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TLDR
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.Abstract:
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.read more
Citations
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Journal ArticleDOI
Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
Siming Chen,Wei Li,Jiang Wu,Qi Jiang,Mingchu Tang,Samuel Shutts,Stella N. Elliott,Angela Sobiesierski,Alwyn J. Seeds,Ian M. Ross,Peter Michael Smowton,Huiyun Liu +11 more
TL;DR: In this paper, the authors demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 cm−2, a room-temperature output power exceeding 105mW and operation up to 120°C.
Journal ArticleDOI
On-chip light sources for silicon photonics
TL;DR: Zhou et al. as discussed by the authors assess the three main contenders for on-chip light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers.
Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
TL;DR: In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.
Book
Silicon Photonics Design: From Devices to Systems
TL;DR: In this article, the authors present the state-of-the-art in the field of fabless silicon photonic systems, including the following: 1.1 Optical Waveguide Mode Solver 2.2 Wave Propagation 2.3 Optoelectronic models 2.4 Microwave Modelling 2.5 Thermal Modeling 2.6 Photonic Circuit Modelling 3.7 Physical Layout 2.8 Software Tools Integration 3.4 Code Listings 4.5 Problems 4.7 Problems 5.4 Polarization 5.5 Problem 5.6 Code List
References
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Journal ArticleDOI
Direct band Ge photoluminescence near 1.6 μm coupled to Ge-on-Si microdisk resonators
TL;DR: In this article, the authors fabricate and optically characterize germanium microdisks formed out of epitaxial Germanium grown on silicon and demonstrate that significantly higher doping levels are critical in order to achieve lasing at reasonable pump conditions.
Journal ArticleDOI
Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes
TL;DR: In this article, a Si-substrate-based Ge p-i-n heterojunction photodiode structure operated under forward bias was observed for room temperature direct band gap emission.
Journal ArticleDOI
Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers.
TL;DR: This technique allows P atomic layer doping in Ge and can be scaled up to an arbitrary number of doped layers maintaining atomic level control of the interface.
Journal ArticleDOI
Efficient above-band-gap light emission in germanium
Jifeng Liu,Xiaochen Sun,Yu Bai,Kenneth E. Lee,Eugene A. Fitzgerald,Lionel C. Kimerling,Jurgen Michel +6 more
TL;DR: In this paper, an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20~296 K was reported.
Proceedings ArticleDOI
Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers
TL;DR: In this paper, the edge-emission electroluminescence from waveguide Ge-on-Si pnn heterojunction diode structures is demonstrated, and selective growth of highly phosphorus doped Ge in oxide trenches shows promise as a design for electrically pumped laser on Si.