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An electrically pumped germanium laser

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TLDR
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.
Abstract
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.

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Journal ArticleDOI

A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects

TL;DR: In this article, a beam-shaped germanium (Ge) on silicon (Si) photodiodes is presented for fabricating high performance Ge/Si photododes.
Journal ArticleDOI

A 40 Gbit/s optical link on a 300-mm silicon platform

TL;DR: A 40 Gbit/s optical link is demonstrated by coupling a silicon (Si) optical modulator to a germanium (Ge) photo-detector from two separate photonic chips.
Journal ArticleDOI

Impact of thickness on the structural properties of high tin content GeSn layers

TL;DR: In this paper, the authors have grown various thicknesses of GeSn layers in a 200mm industrial Reduced Pressure Chemical Vapor Deposition cluster tool using digermane (Ge2H6) and tin tetrachloride (SnCl4).
Journal ArticleDOI

Universal method for constructing N-port non-blocking optical router based on 2 × 2 optical switch for photonic networks-on-chip

TL;DR: A universal method for constructing N-port non-blocking optical router for photonic networks-on-chip, in which all microring optical switches or Mach-Zehnder optical switches behave as 2 × 2 optical switches is proposed.
References
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Journal Article

Silicon photonics

TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
Journal ArticleDOI

Ge-on-Si laser operating at room temperature.

TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
Journal ArticleDOI

Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

TL;DR: Results indicate that tensile strained n-type Ge is a good candidate for Si integrated lasers, despite of the free carrier absorption loss.
Journal ArticleDOI

Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

TL;DR: In this article, a GaAs/AlxGa(1−x)As quantum well laser has been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GeSi/Si virtual substrates on Si.
Journal ArticleDOI

Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.

TL;DR: A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated that allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials.
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