An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
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Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.Abstract:
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.read more
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Journal ArticleDOI
Large inherent optical gain from the direct gap transition of Ge thin films
TL;DR: In this article, the authors reported a large inherent direct gap optical gain ≥1300 cm−1 at room temperature from both tensile-strained n+ Ge-on-Si films and intrinsic Ge-onsulator using femtosecond transmittance spectroscopy captured before direct-to-indirect valley scattering.
Journal ArticleDOI
Photonic Bound States in the Continuum in Si Structures with the Self-Assembled Ge Nanoislands
Sergey A. Dyakov,M. V. Stepikhova,Andrey Bogdanov,A. V. Novikov,D. V. Yurasov,Mikhail Shaleev,Z. F. Krasilnik,Sergei G. Tikhodeev,Nikolay A. Gippius +8 more
TL;DR: In this paper, the authors demonstrate that photoluminescence of Ge nanoislands in silicon photonic crystal slab with hexagonal lattice can be dramatically enhanced due to the involvement in the emission process of the bounds states in the continuum.
Journal ArticleDOI
Whispering Gallery Mode Resonances from Ge Micro-Disks on Suspended Beams
Abdelrahman Al-Attili,Satoshi Kako,Muhammad Husain,Frederic Y. Gardes,Naoki Higashitarumizu,Satoshi Iwamoto,Yasuhiko Arakawa,Yasuhiko Ishikawa,Hideo Arimoto,Hideo Arimoto,Katsuya Oda,Tatemi Ido,Shinichi Saito +12 more
TL;DR: In this paper, the authors demonstrate the fabrication of a simple cavity while imposing tensile strain by suspension using Ge-On-Insulator (GOI) wafers, which is considered to be one of the most promising materials for realizing full monolithic integration of a light source on a silicon (Si) photonic chip.
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Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects
Papichaya Chaisakul,Vladyslav Vakarin,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Laurent Vivien,Delphine Marris-Morini +6 more
TL;DR: In this paper, the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells are discussed.
Journal ArticleDOI
Semiconductor III?V lasers monolithically grown on Si substrates
AC Lee,Huiyun Liu,Alwyn J. Seeds +2 more
TL;DR: In this paper, a review of III-V laser growth on Si is presented, with quantum well and quantum dot technology being used to obtain lasers operating at wavelengths of 1.30, 1.5 and 2 μm, with threshold currents < 1k A cm −2.
References
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Journal Article
Silicon photonics
TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
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Ge-on-Si laser operating at room temperature.
TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
Journal ArticleDOI
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Jifeng Liu,Xiaochen Sun,Dong Pan,Xiaoxin Wang,Lionel C. Kimerling,Thomas L. Koch,Jurgen Michel +6 more
TL;DR: Results indicate that tensile strained n-type Ge is a good candidate for Si integrated lasers, despite of the free carrier absorption loss.
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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
Michael E. Groenert,Christopher W. Leitz,Arthur J. Pitera,Vicky K. Yang,Harry Lee,Rajeev J. Ram,Eugene A. Fitzgerald +6 more
TL;DR: In this article, a GaAs/AlxGa(1−x)As quantum well laser has been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GeSi/Si virtual substrates on Si.
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Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.
TL;DR: A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated that allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials.