An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
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Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.Abstract:
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.read more
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Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform
TL;DR: It is shown that compressively strained Ge1−xSnx/Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x’s width are a very promising gain medium for lasers integrated with an Si platform and reduction in the QW width shifts up the ground electron subband in theQW and increases occupation of the L valley in the barriers instead of the Γ valley inThe QW region.
Journal ArticleDOI
Compatibility of Silicon Mach-Zehnder Modulators for Advanced Modulation Formats
Ke Xu,Ling-Gang Yang,J. Y. Sung,Y. M. Chen,Zhenzhou Cheng,Chi-Wai Chow,Chien-Hung Yeh,Hon Ki Tsang +7 more
TL;DR: In this article, an integrated silicon Mach-Zehnder modulator (MZM) was used for advanced modulation formats despite the nonlinear dependence of refractive index change with applied voltage in the free-carrier depletion modulator.
Journal ArticleDOI
1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio
Helene Duprez,Antoine Descos,Thomas Ferrotti,Corrado Sciancalepore,Christophe Jany,Karim Hassan,Christian Seassal,Sylvie Menezo,Badhise Ben Bakir +8 more
TL;DR: The design, fabrication and performance of a hetero-integrated III-V on silicon distributed feedback lasers (DFB) at 1310 nm based on direct bonding and adiabatic coupling is reported, achieving mode-hop-free operation with side-mode suppression ratio above 55 dB.
Journal ArticleDOI
Emerging technologies in Si active photonics
Xiaoxin Wang,Jifeng Liu +1 more
TL;DR: In this article, the authors review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices.
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Germanium microlasers on metallic pedestals
Anas Elbaz,Anas Elbaz,M. El Kurdi,Abdelhanin Aassime,Sébastien Sauvage,Xavier Checoury,Isabelle Sagnes,Charles Baudot,Frederic Boeuf,Philippe Boucaud +9 more
TL;DR: In this paper, a tensile-strained germanium microdisks have been fabricated with metallic pedestals, and the transferred tensile strain leads to a thin film with a direct bandgap.
References
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Journal Article
Silicon photonics
TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
Journal ArticleDOI
Ge-on-Si laser operating at room temperature.
TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
Journal ArticleDOI
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Jifeng Liu,Xiaochen Sun,Dong Pan,Xiaoxin Wang,Lionel C. Kimerling,Thomas L. Koch,Jurgen Michel +6 more
TL;DR: Results indicate that tensile strained n-type Ge is a good candidate for Si integrated lasers, despite of the free carrier absorption loss.
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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
Michael E. Groenert,Christopher W. Leitz,Arthur J. Pitera,Vicky K. Yang,Harry Lee,Rajeev J. Ram,Eugene A. Fitzgerald +6 more
TL;DR: In this article, a GaAs/AlxGa(1−x)As quantum well laser has been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GeSi/Si virtual substrates on Si.
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Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.
TL;DR: A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated that allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials.