An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
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Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.Abstract:
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.read more
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Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy
S. A. Srinivasan,M. Pantouvaki,Peter Verheyen,Guy Lepage,Philippe Absil,J. Van Campenhout,D. Van Thourhout +6 more
TL;DR: In this paper, the authors deduced the lifetimes of waveguides with varying Ge thickness and width using time-resolved infrared transmission pump-probe spectroscopy using a CW laser.
Journal ArticleDOI
Enhanced GeSn Microdisk Lasers Directly Released on Si
Youngmin Kim,Simone Assali,Daniel Burt,Yongduck Jung,Hyo-Jun Joo,Melvina Chen,Zoran Ikonic,Oussama Moutanabbir,Donguk Nam +8 more
TL;DR: In this paper, a strain-free GeSn microdisk laser device fully released on Si outperforms the canonical suspended devices, allowing to simultaneously relax the limiting compressive strain while offering excellent thermal conduction.
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Theoretical analysis of optical gain in uniaxial tensile strained and n + -doped Ge/GeSi quantum well.
Jialin Jiang,Junqiang Sun +1 more
TL;DR: Simulation results show that the optical gain can be dramatically enhanced with the help of uniaxial tensile strain and n-type doping and consider the competition between gain and loss.
Journal ArticleDOI
Stacking of 2D Electron Gases in Ge Probed at the Atomic Level and Its Correlation to Low-Temperature Magnetotransport
Giordano Scappucci,Wolfgang M. Klesse,Alex R. Hamilton,Giovanni Capellini,David L. Jaeger,Maia Bischof,Richard F. Reidy,Brian P. Gorman,Michelle Y. Simmons +8 more
TL;DR: It is found that at a separation of 9 nm the stacked-2DEGs, while interacting, still maintain their individuality in terms of electron transport and show long phase coherence lengths, resulting in an interlayer scattering time much longer than the scattering time within the dopant plane.
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Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory
Takeshi Fujisawa,Kunimasa Saitoh +1 more
TL;DR: In this paper, the material gain of GeSn/SiGeSn quantum wells, which can be grown on Si substrate using a buffer layer, is analyzed based on microscopic many-body theory (MBT) for mid-infrared light sources based on Si photonics.
References
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Journal Article
Silicon photonics
TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
Journal ArticleDOI
Ge-on-Si laser operating at room temperature.
TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
Journal ArticleDOI
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Jifeng Liu,Xiaochen Sun,Dong Pan,Xiaoxin Wang,Lionel C. Kimerling,Thomas L. Koch,Jurgen Michel +6 more
TL;DR: Results indicate that tensile strained n-type Ge is a good candidate for Si integrated lasers, despite of the free carrier absorption loss.
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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
Michael E. Groenert,Christopher W. Leitz,Arthur J. Pitera,Vicky K. Yang,Harry Lee,Rajeev J. Ram,Eugene A. Fitzgerald +6 more
TL;DR: In this article, a GaAs/AlxGa(1−x)As quantum well laser has been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GeSi/Si virtual substrates on Si.
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Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.
TL;DR: A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated that allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials.