An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
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TLDR
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.Abstract:
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.read more
Citations
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Journal ArticleDOI
Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals
Chad A. Stephenson,William A. O'Brien,Meng Qi,Michael Penninger,William F. Schneider,Mark A. Wistey +5 more
TL;DR: In this article, the authors reported improved band structure calculations for germanium carbides using ab initio simulations that employ the HSE06 exchange-correlation density functional (HSE06-EDF).
Journal ArticleDOI
Hybrid Deformed-Ring AlGaInAs/Si Microlasers With Stable Unidirectional Emission
TL;DR: Hybrid deformed-ring microlasers are investigated to realize stable unidirectional emission from a silicon waveguide in this article, where the mode coupling can eliminate mode competition between clockwise (CW) and counterclockwise (CCW) propagating modes.
Journal ArticleDOI
Pulsed Modification of Germanium Films on Silicon, Sapphire, and Quartz Substrates: Structure and Optical Properties
H. A. Novikov,R. I. Batalov,R. M. Bayazitov,I. A. Faizrakhmanov,N. M. Lyadov,V. A. Shustov,Konstantin N. Galkin,Nikolay G. Galkin,Igor M. Chernev,G. D. Ivlev,S. L. Prokop’ev,Peter I. Gaiduk +11 more
TL;DR: The structural and optical properties of thin Ge films deposited onto semiconducting and insulat� ing substrates and modified by pulsed laser radiation are studied in this article, where the films are deposited by the sputtering of a Ge target with a lowenergy Xe + ion beam.
Journal ArticleDOI
In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes
Chi Xu,James Gallagher,Patrick M. Wallace,C. L. Senaratne,Patrick Sims,Jose Menendez,John Kouvetakis +6 more
TL;DR: In this article, a new method was proposed to achieve very high carrier densities in As-doped germanium using ultra-low temperature, high efficiency routes based on the structurally and chemically compatible inorganic hydrides As(SiH3)3 and As(GeH 3)3.
Journal ArticleDOI
Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells
TL;DR: It has been shown that SiyGe1−x−ySnx barriers, lattice matched to the virtual Ge1-zSnz substrate, may ensure a respectable quantum confinement for electrons and holes in this material system.
References
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Journal Article
Silicon photonics
TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
Journal ArticleDOI
Ge-on-Si laser operating at room temperature.
TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
Journal ArticleDOI
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Jifeng Liu,Xiaochen Sun,Dong Pan,Xiaoxin Wang,Lionel C. Kimerling,Thomas L. Koch,Jurgen Michel +6 more
TL;DR: Results indicate that tensile strained n-type Ge is a good candidate for Si integrated lasers, despite of the free carrier absorption loss.
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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
Michael E. Groenert,Christopher W. Leitz,Arthur J. Pitera,Vicky K. Yang,Harry Lee,Rajeev J. Ram,Eugene A. Fitzgerald +6 more
TL;DR: In this article, a GaAs/AlxGa(1−x)As quantum well laser has been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GeSi/Si virtual substrates on Si.
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Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.
TL;DR: A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated that allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials.