An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
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Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.Abstract:
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.read more
Citations
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Wavelength-based crosstalk-aware design for hybrid optical network-on-chip
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Rational Control of GeSn Nanowires
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Performance analysis of tin-incorporated group-IV alloy based transistor laser
TL;DR: In this article, a steady state analysis of GeSn alloy based single quantum well mid-infrared transistor lasers (TL) is reported, which includes the effect of strain on the material gain and free carrier absorption in the active layer and optical confinement factor in various layers.
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Enhanced light emission from germanium microdisks on silicon by surface passivation through thermal oxidation
TL;DR: In this article, the authors observed enhanced direct-gap light emission from undoped and n-doped germanium microdisks on silicon, attributed mainly to increased carrier density due to surface passivation of the dry-etched sidewall.
Journal ArticleDOI
Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes
Kazuki Tani,Shinichi Saito,Katsuya Oda,Makoto Miura,Yuki Wakayama,Tadashi Okumura,Toshiyuki Mine,Tatemi Ido +7 more
TL;DR: Germanium (Ge) (111) fin was successfully fabricated using a combination of flattening sidewalls of a silicon (Si) fin structure by anisotropic wet etching with tetramethylammonium hydroxide, formation of thin Ge fins by selective Si oxidation in SiGe layers, and enlargement of Ge fin by Ge homogeneous epitaxial growth.
References
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Journal Article
Silicon photonics
TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
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Ge-on-Si laser operating at room temperature.
TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
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Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Jifeng Liu,Xiaochen Sun,Dong Pan,Xiaoxin Wang,Lionel C. Kimerling,Thomas L. Koch,Jurgen Michel +6 more
TL;DR: Results indicate that tensile strained n-type Ge is a good candidate for Si integrated lasers, despite of the free carrier absorption loss.
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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
Michael E. Groenert,Christopher W. Leitz,Arthur J. Pitera,Vicky K. Yang,Harry Lee,Rajeev J. Ram,Eugene A. Fitzgerald +6 more
TL;DR: In this article, a GaAs/AlxGa(1−x)As quantum well laser has been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GeSi/Si virtual substrates on Si.
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Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.
TL;DR: A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated that allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials.