An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
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Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.Abstract:
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.read more
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Proceedings ArticleDOI
Performance analysis of GeSn-alloy-based multiple quantum well transistor laser
TL;DR: In this article, the multiple quantum well SiGeSn/GeSn transistor laser structure is considered and performance parameters are evaluated for the same and the result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates.
Journal ArticleDOI
Extended Defect Propagation in Highly Tensile-Strained Ge Waveguides
Meng Qi,William A. O'Brien,Chad A. Stephenson,Victor Patel,Ning Cao,Brian Thibeault,Marco Schowalter,Andreas Rosenauer,Vladimir Protasenko,Huili Grace Xing,Mark A. Wistey +10 more
TL;DR: In this article, a tensile-strained Ge ridge waveguides with tensile strain in three dimensions were fabricated using compressive silicon nitride (SiNx) films with up to 2 GPa stress as stress liners.
Proceedings ArticleDOI
Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.
Stephan Wirths,R. Geiger,Zoran Ikonic,A. T. Tiedemann,Gregor Mussler,Jean-Michel Hartmann,Siegfried Mantl,Hans Sigg,Detlev Grützmacher,Dan Buca +9 more
TL;DR: In this paper, photoluminescence measurements on highly compressively strained and partially relaxed GeSn alloys with Sn contents up to 13 at.% were performed on both partially relaxed and moderately doped Ge0.88Sn0.12.
Journal ArticleDOI
Tunable photonic circuits: a leap toward system-on-a-chip optical integration
TL;DR: In this paper, the authors suggest that the main advantages of photonic integration are likely to be found in applications requiring the aggregation of many devices into complex systems, as in microelectronics.
Journal ArticleDOI
Pulsed laser annealing of highly doped Ge:Sb layers deposited on different substrates
TL;DR: In this paper, the formation of polycrystalline n-Ge:Sb layers (N Sb ~ 1 at.%) is characterized by increased values of tensile strain (up to 1%) and homogenious Sb dopant distribution within layer thickness.
References
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Journal Article
Silicon photonics
TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
Journal ArticleDOI
Ge-on-Si laser operating at room temperature.
TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
Journal ArticleDOI
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Jifeng Liu,Xiaochen Sun,Dong Pan,Xiaoxin Wang,Lionel C. Kimerling,Thomas L. Koch,Jurgen Michel +6 more
TL;DR: Results indicate that tensile strained n-type Ge is a good candidate for Si integrated lasers, despite of the free carrier absorption loss.
Journal ArticleDOI
Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
Michael E. Groenert,Christopher W. Leitz,Arthur J. Pitera,Vicky K. Yang,Harry Lee,Rajeev J. Ram,Eugene A. Fitzgerald +6 more
TL;DR: In this article, a GaAs/AlxGa(1−x)As quantum well laser has been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GeSi/Si virtual substrates on Si.
Journal ArticleDOI
Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.
TL;DR: A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated that allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials.