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Analog circuits in ultra-deep-submicron CMOS

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TLDR
In this paper, the gate-leakage mismatch exceeds conventional matching tolerances, and the drop in supply voltages can solve this problem by exploiting combinations of thin and thick-oxide transistors.
Abstract
Modern and future ultra-deep-submicron (UDSM) technologies introduce several new problems in analog design. Nonlinear output conductance in combination with reduced voltage gain pose limits in linearity of (feedback) circuits. Gate-leakage mismatch exceeds conventional matching tolerances. Increasing area does not improve matching any more, except if higher power consumption is accepted or if active cancellation techniques are used. Another issue is the drop in supply voltages. Operating critical parts at higher supply voltages by exploiting combinations of thin- and thick-oxide transistors can solve this problem. Composite transistors are presented to solve this problem in a practical way. Practical rules of thumb based on measurements are derived for the above phenomena.

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Citations
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Journal ArticleDOI

Neurogrid: A Mixed-Analog-Digital Multichip System for Large-Scale Neural Simulations

TL;DR: Neurogrid as discussed by the authors is a real-time neuromorphic system for simulating large-scale neural models in real time using 16 Neurocores, including axonal arbor, synapse, dendritic tree, and soma.
Proceedings ArticleDOI

A/D converter trends: Power dissipation, scaling and digitally assisted architectures

TL;DR: This paper summarizes recent trends in the area of low-power A/D conversion and a discussion on minimalistic and digitally assisted design approaches is used to sketch a route toward further improvements in ADC power efficiency and performance.
Journal ArticleDOI

Analog Circuit Design in Nanoscale CMOS Technologies

TL;DR: A survey of the evolution of figure of merit for analog-to-digital converters and factors affecting device matching, including those relating to single devices as well as local and long-distance matching effects are presented.
Journal ArticleDOI

A Comparator With Reduced Delay Time in 65-nm CMOS for Supply Voltages Down to 0.65 V

TL;DR: A comparator in a low-power 65-nm complementary metal-oxide-semiconductor process (only standard transistors with threshold voltage Vt ap 0.4 V were used) is presented, where the circuit of a conventional latch-type comparator consisting of two cross-coupled inverters is modified for fast operation, even with 0.65-V supply.
Journal ArticleDOI

Power Dissipation Bounds for High-Speed Nyquist Analog-to-Digital Converters

TL;DR: An attempt to estimate a lower bound for the power of ADCs, based on first principles and using pipeline and flash architectures as examples, finds that power dissipation of high-resolution ADCs is bound by noise, whereas technology is the limiting factor for low-resolution devices.
References
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Journal ArticleDOI

Matching properties of MOS transistors

TL;DR: In this paper, the matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured, and the matching results have been verified by measurements and calculations on several basic circuits.
Journal ArticleDOI

Design of ion-implanted MOSFET's with very small physical dimensions

TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.
Journal ArticleDOI

Matching properties of MOS transistors

TL;DR: In this article, the matching properties of the threshold voltage, substrate factor and current factor of MOS transistors have been analyzed and measured, and the matching results have been verified by measurements and calculations on a band-gap reference circuit.
Journal ArticleDOI

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

TL;DR: In this article, the degradation behavior of n-channel transistors under alternating injection conditions is discussed and fully explained based on the static stress degradation model for both channel types using the charge-pumping technique.
Journal ArticleDOI

CMOS design near the limit of scaling

TL;DR: In this paper, the authors examined the fundamental limiting factors that will ultimately limit CMOS scaling and considered the design issues near the limit of scaling, including electron thermal energy, tunneling leakage through gate oxide, and 2D electrostatic scale length.