Journal ArticleDOI
Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS
Julien Vidal,Stephan Lany,Mayeul d'Avezac,Alex Zunger,Andriy Zakutayev,Jason Francis,Janet Tate +6 more
TLDR
In this paper, the authors employ both theory and experiment to assess the PV relevant properties of SnS and clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation.Abstract:
SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.read more
Citations
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One-Dimensional-Sn2X3 (X = S, Se) as Promising Optoelectronic and Thermoelectronic Materials: A Comparison with Three-Dimensional-Sn2X3.
Raja Sen,Priya Johari +1 more
TL;DR: 1D-Sn2X3 (X = S and Se) nanochains are comprehensively studied and demonstrated to be stable and exfoliable from their bulk counterpart and to be better than three-dimensional (3D)-Sn2 X3 for few of the applications.
Journal Article
Electrically Tunable Polarizer based on 2D Orthorhombic Ferrovalley Materials
TL;DR: In this paper, a new member of the ferrovalley family with orthorhombic lattice was introduced, i.e. monolayer group-IV monochalcogenides (GIVMs), in which the intrinsic valley polarization originates from ferroelectricity, instead of ferromagnetism.
Journal ArticleDOI
Catalytic growth of vertically aligned SnS/SnS2 p–n heterojunctions
TL;DR: In this article, nanowire arrays of SnS/SnS2 p-n heterojunctions are grown on transparent indium tin oxide (ITO) coated glass and Si/SiO2 substrates via chemical vapor transport (CVT).
Journal ArticleDOI
Emerging Binary Chalcogenide Light Absorbers: Material Specific Promises and Challenges
TL;DR: In this paper, the authors survey studies on chalcogenide light absorbers having a simple binary composition and scrutinize recently developed strategies for overcoming the material specific challenges while presenting future perspectives on each material.
Journal ArticleDOI
Novel phases and superconductivity of tin sulfide compounds.
TL;DR: A first-principles evolutionary crystal structure search is performed with the goal of constructing the complete phase diagram of Tin sulfides and discovering new phases as well as new compounds of varying stoichiometry at ambient conditions and pressures up to 100 GPa.
References
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From ultrasoft pseudopotentials to the projector augmented-wave method
Georg Kresse,Daniel P. Joubert +1 more
TL;DR: In this paper, the formal relationship between US Vanderbilt-type pseudopotentials and Blochl's projector augmented wave (PAW) method is derived and the Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional.
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Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
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19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
Ingrid Repins,Miguel A. Contreras,Brian Egaas,Clay DeHart,John Scharf,Craig L. Perkins,Bobby To,Rommel Noufi +7 more
TL;DR: In this paper, the authors reported a new record total area efficiency of 19·9% for thin-film solar cells using three-stage co-evaporation with a modified surface termination.
Journal ArticleDOI
High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber
TL;DR: A non-vacuum, slurry-based coating method that combines advantages of both solution processing and particlebased deposition is shown, enabling fabrication of Cu2ZnSn(Se,S)4 devices with over 9.6% efficiency—a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches and >40% higher than previous record devices prepared using vacuum-based methods.
Journal ArticleDOI
Materials availability expands the opportunity for large-scale photovoltaics deployment.
TL;DR: A roadmap emphasizing low-cost alternatives that could become a dominant new approach for photovoltaics research and deployment is developed and it is found that devices performing below 10% power conversion efficiencies deliver the same lifetime energy output as those above 20% when a 3/4 material reduction is achieved.