Journal ArticleDOI
Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS
Julien Vidal,Stephan Lany,Mayeul d'Avezac,Alex Zunger,Andriy Zakutayev,Jason Francis,Janet Tate +6 more
TLDR
In this paper, the authors employ both theory and experiment to assess the PV relevant properties of SnS and clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation.Abstract:
SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.read more
Citations
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Journal ArticleDOI
Single Phase Formation of SnS Competing with SnS2 and Sn2S3 for Photovoltaic Applications: Optoelectronic Characteristics of Thin-Film Surfaces and Interfaces
TL;DR: Tin monosulfide (SnS) is one of the most promising binary compounds for thin-film solar cells owing to its suitable optical properties and abundance in nature.
Journal ArticleDOI
Lead-free tin chalcogenide thermoelectric materials
TL;DR: In this article, a short perspective summarizes some current strategies that could enhance the thermoelectric performance of bulk lead-free tin chalcogenides, such as band structure engineering, nanostructuring, and synergistically improved approaches.
Journal ArticleDOI
Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality
Jae Yu Cho,SeongYeon Kim,R. Nandi,Junsung Jang,Hee-Sun Yun,Hee-Sun Yun,Enkhjargal Enkhbayar,Jin Hyeok Kim,Doh-Kwon Lee,Doh-Kwon Lee,Choong-Heui Chung,JunHo Kim,Jaeyeong Heo +12 more
TL;DR: In this paper, a vapor-transport-deposited (VTD) SnS absorber/CdS heterojunction solar cells with good long-term stability over two years was reported.
Journal ArticleDOI
Tuning the Phase and Optical Properties of Ultrathin SnSx Films
Y. B. Yang,J. K. Dash,Yu Xiang,Yiping Wang,Jian Shi,Peter H. Dinolfo,Toh-Ming Lu,Gwo-Ching Wang +7 more
TL;DR: In this paper, a simple film growth method was proposed to tune the S composition, x from 1 to 2 in semiconductor ultrathin SnSx films on quartz substrates, that is, single phase SnS, single Phase SnS2, and mixed phases of both SnS and SnS 2 by varying the sulfurization temperature from 150 to 500 °C.
Journal ArticleDOI
Improving Efficiency of Evaporated Cu2ZnSnS4 Thin Film Solar Cells by a Thin Ag Intermediate Layer between Absorber and Back Contact
TL;DR: In this article, a 20 nm Ag coating on Mo back contact was adopted to improve the back contact of evaporated Cu2ZnSnS4 (CZTS) solar cells.
References
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From ultrasoft pseudopotentials to the projector augmented-wave method
Georg Kresse,Daniel P. Joubert +1 more
TL;DR: In this paper, the formal relationship between US Vanderbilt-type pseudopotentials and Blochl's projector augmented wave (PAW) method is derived and the Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional.
Journal ArticleDOI
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
Journal ArticleDOI
19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
Ingrid Repins,Miguel A. Contreras,Brian Egaas,Clay DeHart,John Scharf,Craig L. Perkins,Bobby To,Rommel Noufi +7 more
TL;DR: In this paper, the authors reported a new record total area efficiency of 19·9% for thin-film solar cells using three-stage co-evaporation with a modified surface termination.
Journal ArticleDOI
High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber
TL;DR: A non-vacuum, slurry-based coating method that combines advantages of both solution processing and particlebased deposition is shown, enabling fabrication of Cu2ZnSn(Se,S)4 devices with over 9.6% efficiency—a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches and >40% higher than previous record devices prepared using vacuum-based methods.
Journal ArticleDOI
Materials availability expands the opportunity for large-scale photovoltaics deployment.
TL;DR: A roadmap emphasizing low-cost alternatives that could become a dominant new approach for photovoltaics research and deployment is developed and it is found that devices performing below 10% power conversion efficiencies deliver the same lifetime energy output as those above 20% when a 3/4 material reduction is achieved.