Journal ArticleDOI
Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS
Julien Vidal,Stephan Lany,Mayeul d'Avezac,Alex Zunger,Andriy Zakutayev,Jason Francis,Janet Tate +6 more
TLDR
In this paper, the authors employ both theory and experiment to assess the PV relevant properties of SnS and clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation.Abstract:
SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.read more
Citations
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Emerging in-plane anisotropic two-dimensional materials
Liang Li,Liang Li,Wei Han,Lejing Pi,Ping Niu,Junbo Han,Chengliang Wang,Bin Su,Huiqiao Li,Jie Xiong,Yoshio Bando,Yoshio Bando,Tianyou Zhai +12 more
Journal ArticleDOI
Phase stability of the earth-abundant tin sulfides SnS, SnS2, and Sn2S3
Lee A. Burton,Aron Walsh +1 more
TL;DR: In this paper, first-principles calculations are employed to better understand this novel geometry and its place within the tin sulfide multiphasic system, and the enthalpies of formation for the known phases of SnS, SnS2, and Sn2S3 are reported.
Journal ArticleDOI
Solution synthesis of ultrathin single-crystalline SnS nanoribbons for photodetectors via phase transition and surface processing.
TL;DR: This work paves the way for the colloidal growth of low-cost, environmentally benign, single-crystalline narrow band gap semiconductor nanostructures from abundant elements for applications in photodetectors and other nanoscale devices.
Journal ArticleDOI
Diverse anisotropy of phonon transport in two-dimensional group IV-VI compounds: A comparative study.
Guangzhao Qin,Guangzhao Qin,Zhenzhen Qin,Wuzhang Fang,Li-Chuan Zhang,Sheng-Ying Yue,Qing-Bo Yan,Ming Hu,Gang Su +8 more
TL;DR: In this paper, the phonon transport properties of the 2D orthorhombic group IV-VI compounds of GeS, GeSe, SnS and SnSe were investigated.
Journal ArticleDOI
Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory
TL;DR: In this paper, X-ray photoemission spectroscopy (XPS) and inverse photo-emission (IPS) measurements of single crystal SnS, SnS2, and Sn2S3, with electronic-structure calculations from density functional theory (DFT), are presented.
References
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From ultrasoft pseudopotentials to the projector augmented-wave method
Georg Kresse,Daniel P. Joubert +1 more
TL;DR: In this paper, the formal relationship between US Vanderbilt-type pseudopotentials and Blochl's projector augmented wave (PAW) method is derived and the Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional.
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Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
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19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
Ingrid Repins,Miguel A. Contreras,Brian Egaas,Clay DeHart,John Scharf,Craig L. Perkins,Bobby To,Rommel Noufi +7 more
TL;DR: In this paper, the authors reported a new record total area efficiency of 19·9% for thin-film solar cells using three-stage co-evaporation with a modified surface termination.
Journal ArticleDOI
High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber
TL;DR: A non-vacuum, slurry-based coating method that combines advantages of both solution processing and particlebased deposition is shown, enabling fabrication of Cu2ZnSn(Se,S)4 devices with over 9.6% efficiency—a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches and >40% higher than previous record devices prepared using vacuum-based methods.
Journal ArticleDOI
Materials availability expands the opportunity for large-scale photovoltaics deployment.
TL;DR: A roadmap emphasizing low-cost alternatives that could become a dominant new approach for photovoltaics research and deployment is developed and it is found that devices performing below 10% power conversion efficiencies deliver the same lifetime energy output as those above 20% when a 3/4 material reduction is achieved.