Journal ArticleDOI
Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS
Julien Vidal,Stephan Lany,Mayeul d'Avezac,Alex Zunger,Andriy Zakutayev,Jason Francis,Janet Tate +6 more
TLDR
In this paper, the authors employ both theory and experiment to assess the PV relevant properties of SnS and clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation.Abstract:
SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.read more
Citations
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Density functional description of long-range electron Coulomb interactions in bulk SnS
TL;DR: In this article , a high-throughput benchmarking technique for testing the performance of different exchange-correlation functionals and pseudopotentials is proposed and applied to bulk SnS. But, contrary to the popular view that the local density approximation can best describe layered materials, a semilocal pseudopotential with a functional having a gradient dependence better described lattice vectors and ''tetragonicity of the lattice''.
Dissertation
Tin sulphide solar cells by thermal evaporation
TL;DR: In this paper, a thin film solar cell production process is described, and the n-type partner for p-snS thin film cells is discussed. But the authors do not discuss the performance of the thin film cell.
Optical linear-nonlinear and dispersion parameters of thermally evaporated SnS thin films as absorber material for solar cells
TL;DR: In this article , the optical properties of SnS thin films, deposited on FTO coated glass substrates at room temperature by thermal evaporation technique, were analyzed and obtained results are compared with data of SNS films grown on glass and ITO substrates.
Book ChapterDOI
Introduction
TL;DR: In-plane anisotropic 2D materials as discussed by the authors cover a wide range of materials including black phosphorus, group IV monochalcogenides (GeS, GeSe, SnS, SnSe), Xenes (silicene, germanene, stanene, etc.), 2D organics (pentacene, dioctylbenzothienobenzothienothiophene (C8-BTBT), etc.), and more.
Journal ArticleDOI
DFT investigation of structural and optoelectronic properties of glassy chalcogenide CuXY2 (X = Sb, Bi; Y = S, Se, Te) molecules
TL;DR: In this paper , the structural, electronic, spectral and optical properties of the ternary semiconducting material CuXY2 (X = Sb, Bi; Y = S, Se, Te) are computed using the density functional theory (DFT) technique.
References
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Journal ArticleDOI
From ultrasoft pseudopotentials to the projector augmented-wave method
Georg Kresse,Daniel P. Joubert +1 more
TL;DR: In this paper, the formal relationship between US Vanderbilt-type pseudopotentials and Blochl's projector augmented wave (PAW) method is derived and the Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional.
Journal ArticleDOI
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
Journal ArticleDOI
19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
Ingrid Repins,Miguel A. Contreras,Brian Egaas,Clay DeHart,John Scharf,Craig L. Perkins,Bobby To,Rommel Noufi +7 more
TL;DR: In this paper, the authors reported a new record total area efficiency of 19·9% for thin-film solar cells using three-stage co-evaporation with a modified surface termination.
Journal ArticleDOI
High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber
TL;DR: A non-vacuum, slurry-based coating method that combines advantages of both solution processing and particlebased deposition is shown, enabling fabrication of Cu2ZnSn(Se,S)4 devices with over 9.6% efficiency—a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches and >40% higher than previous record devices prepared using vacuum-based methods.
Journal ArticleDOI
Materials availability expands the opportunity for large-scale photovoltaics deployment.
TL;DR: A roadmap emphasizing low-cost alternatives that could become a dominant new approach for photovoltaics research and deployment is developed and it is found that devices performing below 10% power conversion efficiencies deliver the same lifetime energy output as those above 20% when a 3/4 material reduction is achieved.