Journal ArticleDOI
Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS
Julien Vidal,Stephan Lany,Mayeul d'Avezac,Alex Zunger,Andriy Zakutayev,Jason Francis,Janet Tate +6 more
TLDR
In this paper, the authors employ both theory and experiment to assess the PV relevant properties of SnS and clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation.Abstract:
SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.read more
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Antimony-Doped Tin(II) Sulfide Thin Films
Prasert Sinsermsuksakul,Rupak Chakraborty,Sang Bok Kim,Steven M. Heald,Tonio Buonassisi,Roy G. Gordon +5 more
TL;DR: In this article, small amounts of antimony (∼1%) were found to greatly increase the electrical resistance of the tin monosulfide (SnS) films, and the resulting intrinsic SnS(Sb) films were used for the insulating layer in a p-i-n design for solar cells.
Journal ArticleDOI
Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells
Leizhi Sun,Richard Haight,Prasert Sinsermsuksakul,Sang Bok Kim,Helen Hejin Park,Roy G. Gordon +5 more
TL;DR: In this article, the authors reported band alignment studies of SnS/Zn(O,S) heterojunctions with various compositions of Zn(S, O,S).
Journal ArticleDOI
The Role of Intrinsic Defects in Electrocatalytic Activity of Monolayer VS2 Basal Planes for the Hydrogen Evolution Reaction
TL;DR: In this paper, structural stability, electronic properties, and HER activity of monolayer VS2 nanosheets with various intrinsic point defects are studied by using first-principles calculations.
Journal ArticleDOI
Structural and electrical properties of SnS2 thin films
Andrii Andriiovych Voznyi,Andrii Andriiovych Voznyi,V. Kosyak,V. Kosyak,Anatoliy Opanasyuk,N. Tirkusova,Liga Grase,Arturs Medvids,Gundars Mezinskis +8 more
TL;DR: In this paper, the effect of substrate temperature on the structural and electrical properties, phase composition, and surface morphology of tin disulfide thin (SnS 2 ) films obtained by the close-spaced vacuum sublimation (CSS) method was studied.
Journal ArticleDOI
Engineering the optical properties of PVA/PVP polymeric blend in situ using tin sulfide for optoelectronics
TL;DR: In this paper, the optical properties of polyvinyl alcohol (PVA)/polyvinyl pyrrolidone (PVP) (1:1) polymeric blend have been tuned in situ using tin sulfide (SnS) semiconductor for optoelectronics.
References
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Journal ArticleDOI
From ultrasoft pseudopotentials to the projector augmented-wave method
Georg Kresse,Daniel P. Joubert +1 more
TL;DR: In this paper, the formal relationship between US Vanderbilt-type pseudopotentials and Blochl's projector augmented wave (PAW) method is derived and the Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional.
Journal ArticleDOI
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
Journal ArticleDOI
19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
Ingrid Repins,Miguel A. Contreras,Brian Egaas,Clay DeHart,John Scharf,Craig L. Perkins,Bobby To,Rommel Noufi +7 more
TL;DR: In this paper, the authors reported a new record total area efficiency of 19·9% for thin-film solar cells using three-stage co-evaporation with a modified surface termination.
Journal ArticleDOI
High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber
TL;DR: A non-vacuum, slurry-based coating method that combines advantages of both solution processing and particlebased deposition is shown, enabling fabrication of Cu2ZnSn(Se,S)4 devices with over 9.6% efficiency—a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches and >40% higher than previous record devices prepared using vacuum-based methods.
Journal ArticleDOI
Materials availability expands the opportunity for large-scale photovoltaics deployment.
TL;DR: A roadmap emphasizing low-cost alternatives that could become a dominant new approach for photovoltaics research and deployment is developed and it is found that devices performing below 10% power conversion efficiencies deliver the same lifetime energy output as those above 20% when a 3/4 material reduction is achieved.