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Journal ArticleDOI

Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS

TLDR
In this paper, the authors employ both theory and experiment to assess the PV relevant properties of SnS and clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation.
Abstract
SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.

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Dissertation

Defects and charge-carrier lifetime in early-stage photovoltaic materials : relating experiment to theory

TL;DR: In this paper, the authors investigated the impact of defects and their impact on lifetime in early-stage PV materials, focusing on experimental methods to assess lifetime connected to theoretical concepts about both defects and lifetime measurements themselves.
Journal ArticleDOI

Experimental and numerical simulation of the performance of SnS based solar cells.

TL;DR: In this article , the performance of the SnS-based proposed solar cells studied from the numerical simulation using SCAPS-1D software was analyzed using X-ray diffraction (DRX).
Journal ArticleDOI

Improvement in Thermoelectric Performance of SnS Due to Electronic Structure Modification Under Biaxial Strain

TL;DR: In this article, the authors used the full potential linearized augmented plane-wave technique and the semi-classical Boltzmann theory to study thermoelectric properties of unstrained SnS and at 1, 2% and 3% applied biaxial tensile (BT) strain.
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Solution‐Processed Wafer‐Scale Ag2S Thin Films: Synthesis and Excellent Charge Transport Properties

TL;DR: In this paper , a solution-processed approach is reported to produce wafer-sized, highly crystalline α-Ag2S thin films, with room-temperature mobility of ≈150 cm2 V−1 s−1 and diffusion length exceeding 500 nm.
Journal ArticleDOI

Methods to form atomically thin carbon coatings on SnS and SnO2 nanostructures

TL;DR: In this paper, a citric acid-assisted solvothermal method was used to construct C@SnS@C sandwich nanosheets, which assemble into 3D porous microspheres.
References
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Journal ArticleDOI

From ultrasoft pseudopotentials to the projector augmented-wave method

TL;DR: In this paper, the formal relationship between US Vanderbilt-type pseudopotentials and Blochl's projector augmented wave (PAW) method is derived and the Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional.
Journal ArticleDOI

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
Journal ArticleDOI

19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

TL;DR: In this paper, the authors reported a new record total area efficiency of 19·9% for thin-film solar cells using three-stage co-evaporation with a modified surface termination.
Journal ArticleDOI

High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber

TL;DR: A non-vacuum, slurry-based coating method that combines advantages of both solution processing and particlebased deposition is shown, enabling fabrication of Cu2ZnSn(Se,S)4 devices with over 9.6% efficiency—a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches and >40% higher than previous record devices prepared using vacuum-based methods.
Journal ArticleDOI

Materials availability expands the opportunity for large-scale photovoltaics deployment.

TL;DR: A roadmap emphasizing low-cost alternatives that could become a dominant new approach for photovoltaics research and deployment is developed and it is found that devices performing below 10% power conversion efficiencies deliver the same lifetime energy output as those above 20% when a 3/4 material reduction is achieved.
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