Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel
Wenshen Li,Kazuki Nomoto,Kevin Lee,S. M. Islam,Zongyang Hu,Mingda Zhu,Xiang Gao,Manyam Pilla,Debdeep Jena,Huili Grace Xing +9 more
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TLDR
In this paper, a GaN vertical trench-MOSFET with a regrown channel was investigated, where the channel regrowth by MBE prevents repassivation of the p-type GaN body while promising higher channel mobility.Abstract:
GaN vertical trench-MOSFETs incorporating molecular beam epitaxy (MBE) regrown channel are developed and investigated. The channel regrowth by MBE prevents repassivation of the p-type GaN body while promising higher channel mobility. Two different designs of the lateral portion of the regrown channel are compared: without or with an n+-GaN buried layer. Without an n+ buried layer, a respectable 600-V breakdown voltage (BV) is measured in the absence of edge termination, indicating a decent critical field strength (>1.6 MV/cm) of the regrown channel. However, the ON-resistance is limited by the highly resistive lateral channel due to Mg incorporation. With an n+ buried layer, the limitation is removed. Excellent ON-current of 130 mA/mm and ON-resistivity of $6.4 ~\rm {m\Omega \cdot cm^{2}}$ are demonstrated. The BV is limited by high source–drain leakage current from the channel due to drain-induced barrier lowering (DIBL) effect. Device analysis together with TCAD simulations points out the major cause for the DIBL effect: the presence of interface charge beyond a critical value ( $\sim 6\times 10^{12}\,\,\rm {cm^{-2}}$ ) at the regrowth interface on etched sidewalls. This paper provides valuable insights into the design of GaN vertical trench-MOSFET with a regrown channel, where simultaneous achievement of low ON-resistivity and high BV is expected in devices with reduced interface charge density and improved channel design to eliminate DIBL.read more
Citations
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Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
Journal ArticleDOI
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
Samuel James Bader,Hyunjea Lee,Reet Chaudhuri,Shimin Huang,Austin Hickman,Alyosha Molnar,Huili Grace Xing,Debdeep Jena,Han Wui Then,Nadim Chowdhury,Tomas Palacios +10 more
TL;DR: In this paper, a review examines potential CMOS monolithic and hybrid approaches in a variety of wide bandgap materials for power and RF electronics applications, which can switch large currents and voltages rapidly with low losses.
Journal ArticleDOI
Activation of buried p-GaN in MOCVD-regrown vertical structures
Wenshen Li,Kazuki Nomoto,Kevin Lee,S. M. Islam,Zongyang Hu,Mingda Zhu,Xiang Gao,Jinqiao Xie,Manyam Pilla,Debdeep Jena,Huili Grace Xing +10 more
TL;DR: In this paper, the effect of the n-type doping level on the activation of buried p-type GaN was investigated in metal-organic chemical vapor deposition-regrown vertical structures, where the buried GaN is re-passivated by hydrogen during regrowth.
Journal ArticleDOI
3D GaN nanoarchitecture for field-effect transistors
Muhammad Fahlesa Fatahilah,Klaas Strempel,Feng Yu,Sindhuri Vodapally,Andreas Waag,Hutomo Suryo Wasisto +5 more
TL;DR: The 3D GaN field effect transistors (FETs) as discussed by the authors offer excellent electrostatic control over the channel and enable very low sub-threshold swing values close to the theoretical limit.
References
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TL;DR: In this paper, vertical GaN transistors fabricated on bulk GaN substrates are discussed and a threshold voltage of 0.5 V and saturation current > 2.3 A are demonstrated.
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Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
TL;DR: In this paper, complete vertical trench gate metal oxide semiconductor field effect transistors (MOSFETs) have been produced using gallium nitride (GaN) for the first time.
Journal ArticleDOI
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