Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
Yi Zhang,Tay-Rong Chang,Bo Zhou,Yong-Tao Cui,Hao Yan,Hao Yan,Zhongkai Liu,Zhongkai Liu,F. Schmitt,F. Schmitt,James J. Lee,James J. Lee,Robert G. Moore,Robert G. Moore,Yulin Chen,Yulin Chen,Yulin Chen,Hsin Lin,Horng-Tay Jeng,Sung-Kwan Mo,Zahid Hussain,Arun Bansil,Zhi-Xun Shen,Zhi-Xun Shen +23 more
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TLDR
The first direct observation of the transition from indirect to direct bandgap in monolayer samples is reported by using angle-resolved photoemission spectroscopy on high-quality thin films of MoSe2 with variable thickness, grown by molecular beam epitaxy.Abstract:
The transition from an indirect to direct bandgap in transition metal dichalcogenides has been observed in samples with thicknesses ranging from 8 to 1 monolayers by angle-resolved photoemission spectroscopy.read more
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Spin and pseudospins in layered transition metal dichalcogenides
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Recent Advances in Two-Dimensional Materials beyond Graphene
Ganesh R. Bhimanapati,Zhong Lin,Vincent Meunier,Vincent Meunier,Yeonwoong Jung,Jangho J Cha,Saptarshi Das,Di Xiao,Young-Woo Son,Michael S. Strano,Valentino R. Cooper,Liangbo Liang,Liangbo Liang,Steven G. Louie,Steven G. Louie,Emilie Ringe,Wenchao Zhou,Steve S. Kim,Rajesh R. Naik,Bobby G. Sumpter,Humberto Terrones,Humberto Terrones,Fengnian Xia,Yeliang Wang,Jian Zhu,Deji Akinwande,Nasim Alem,Jon A. Schuller,Raymond E. Schaak,Mauricio Terrones,Joshua A. Robinson +30 more
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Vasilios Georgakilas,Jitendra N. Tiwari,K. Christian Kemp,Jason A. Perman,Athanasios B. Bourlinos,Kwang S. Kim,Radek Zboril +6 more
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Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
Miguel M. Ugeda,Aaron J. Bradley,Su-Fei Shi,Felipe H. da Jornada,Yi Zhang,Diana Y. Qiu,Wei Ruan,Sung-Kwan Mo,Zahid Hussain,Zhi-Xun Shen,Feng Wang,Steven G. Louie,Michael F. Crommie +12 more
TL;DR: The renormalized bandgap and large exciton binding observed here will have a profound impact on electronic and optoelectronic device technologies based on single-layer semiconducting TMDs.
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Colloquium : Excitons in atomically thin transition metal dichalcogenides
Gang Wang,Alexey Chernikov,Mikhail M. Glazov,Tony F. Heinz,Xavier Marie,Thierry Amand,Bernhard Urbaszek +6 more
TL;DR: In this article, the authors reviewed recent progress in understanding of the excitonic properties in monolayer transition metal dichalcogenides (TMDs) and future challenges are laid out.
References
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