Journal ArticleDOI
Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application
Yanli Pei,Chengkuan Yin,Masahiko Nishijima,Toshiya Kojima,Takafumi Fukushima,Tetsu Tanaka,Mitsumasa Koyanagi +6 more
TLDR
In this article, the formation of high density tungsten nanodots (W-NDs) embedded in silicon nitride via a self-assembled nanodot deposition is demonstrated.Abstract:
In this letter, the formation of high density tungsten nanodots (W-NDs) embedded in silicon nitride via a self-assembled nanodot deposition is demonstrated. In this method, tungsten and silicon nitride are cosputtered in high vacuum rf sputtering equipment. The W-NDs with small diameters (1–1.5 nm) and high density (∼1.3×1013/cm2) were achieved easily by controlling W composition; this is the ratio of total area of W chips to that of silicon nitride target. The metal-oxide-semiconductor memory device was fabricated with high density W-NDs floating gate and high-k HfO2 blocking dielectric. A wide range memory window (0–29 V) was obtained after bidirectional gate voltages sweeping with range of ±1–±23 V. It is feasible to design the memory window with propriety power consumption for nonvolatile memory application.read more
Citations
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Journal ArticleDOI
Nanocrystals for silicon-based light-emitting and memory devices
TL;DR: In this paper, the size-dependent electrical and optical properties of group-IV semiconductors (Si and Ge), metal and high-k NCs for silicon planar technology compatible light-emitting and floating gate memory devices are discussed.
Journal ArticleDOI
Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals
TL;DR: In this paper, the impact of iridium-oxide (IrOx) nano layer thickness on the tunneling oxide and memory performance of IrOx metal nanocrystals in an n-Si/SiO2/Al2O3/IrOx/Al 2O3)/IrOx structure has been investigated.
Journal ArticleDOI
MOSFET Nonvolatile Memory with High-Density Cobalt-Nanodots Floating Gate and $\hbox{HfO}_{\bf 2}$ High-k Blocking Dielectric
Yanli Pei,Chengkuan Yin,Toshiya Kojima,Jicheol Bea,Hisashi Kino,T. Fukushima,Tetsu Tanaka,M. Koyanagi +7 more
TL;DR: In this article, a high-performance MOSFET nonvolatile memory with high-density cobalt-nanodots (Co-NDs) floating gate and HfO2 high-k blocking dielectric was reported.
Journal ArticleDOI
Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric
Yanli Pei,Chengkuan Yin,Toshiya Kojima,Masahiko Nishijima,Takafumi Fukushima,Tetsu Tanaka,Mitsumasa Koyanagi +6 more
TL;DR: In this paper, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses clearly show that the high metallic Co-ND is crystallized with small size of ∼2nm and high density of (4-5)×1012/cm2.
Journal ArticleDOI
Improved performance of non-volatile memory with Au-Al2O3 core-shell nanocrystals embedded in HfO2 matrix
TL;DR: In this paper, the authors demonstrate a charge trapping memory with Au-Al2O3 core-shell nanocrystals (NCs) embedded in HfO2 high-k dielectric.
References
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Fast and long retention-time nano-crystal memory
TL;DR: In this article, a threshold-shifting, single transistor memory structure with fast read and write times and long retention time is described, which consists of a silicon field effect transistor with nano-crystals of germanium or silicon placed in the gate oxide in close proximity of the inversion surface.
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Annealing characteristics of Si‐rich SiO2 films
TL;DR: In this article, the growth and crystallinity of the silicon clusters were monitored by transmission electron microscopy and the minimum silicon crystal diameter was measured at 2.5 nm for both atmospheric and plasma-enhanced CVD films.
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Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
TL;DR: The formation of Ru nanocrystals is demonstrated on a SiO2 substrate by plasma enhanced atomic layer deposition using diethylcyclopentadienyl ruthenium and NH3 plasma as mentioned in this paper.
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Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
TL;DR: In this article, the formation of stacked Ni silicide nanocrystals by using a comixed target is proposed, and a physical model is also proposed further to explain the saturation phenomenon of threshold voltage at different programming voltages with operation duration.
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Memory characteristics of cobalt-silicide nanocrystals embedded in HfO2 gate oxide for nonvolatile nanocrystal flash devices
TL;DR: In this article, the authors used CoSi2 nanocrystals for charge storage for metal oxide semiconductor (MOS) devices with thin HfO2 tunneling and control oxide layers.