Infrared photoluminescence on molecular beam epitaxially grown Hg1-xCdxTe layers
TLDR
In this paper, the Fourier transform photoluminescence of Hg1-xCdxTe layers with 0.25 <x<0.93 was investigated in the spectral range from 1 eV to 1.5 eV.Abstract:
Hg1-xCdxTe is an important material for infrared device technology. Despite a variety of investigations on molecular beam epitaxially (MBE) grown Hg-based superlattices and modulation-doped structures, little attention has been paid to the study of the photoluminescence properties of the constituent materials. The authors report on a systematic study of infrared photoluminescene on Hg1-xCdxTe layers grown by MBE. The Fourier transform photoluminescence of Hg1-xCdxTe layers with 0.25<x<0.93 grown on (110) and (211) GaAs was investigated in the spectral range from 01 eV to 1.5 eV. Emission lines were observed with a full width at half maximum down to 15 meV. Photoluminescence and transmission properties are compared over the temperature range from 4.2 K to 300 K. The possible influence of Burstein-Moss shift, impurity bands and exponential band tails are discussed. Photoluminescence at high temperatures originates from band-to-band transitions. However, low temperature photoluminescence can be attributed either to impurity bands or to additional states due to band tails.read more
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Photoluminescence of CdHgTe epilayers grown on silicon substrates
K. D. Mynbaev,N. L. Bazhenov,V. I. Ivanov-Omskiĭ,V. A. Smirnov,M. V. Yakushev,A. V. Sorochkin,V. S. Varavin,Nikolay N. Mikhailov,G. Yu. Sidorov,Sergey A. Dvoretsky,Yu. G. Sidorov +10 more
TL;DR: In this paper, the photoluminescence spectra of thin layers of CdHgTe solid solutions grown by molecular beam epitaxy on silicon substrates were studied and it was established that a disorder in the solid solution structure in these layers does not exceed that in the layers grown by the same method on GaAs substrate.
Journal ArticleDOI
Optical Studies of Molecular-Beam Epitaxy-Grown Hg 1−x Cd x Te with x = 0.7–0.8
TL;DR: In this article, optical transmission, photoluminescence and photoconductivity were used to study Hg1−xCdxTe with x = 0.7-0.8 (bandgap 0.8-1.1 ) at 300 K. The studied material, which included layers used as spacers and barriers in potential and quantum-well structures, showed a considerable degree of alloy disorder similar to narrower-bandgap HgCdTe grown by the same method.
Journal ArticleDOI
Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content
K. D. Mynbaev,N. L. Bazhenov,A. M. Smirnov,Nikolay N. Mikhailov,V. G. Remesnik,M. V. Yakushev +5 more
TL;DR: In this article, the optical transmission, photoconductivity, photoluminescence, and X-ray diffraction of HgCdTe solid-solution samples with a high content of CdTe (molar fraction 0.7-0.8), grown by molecular-beam epitaxy and liquid-phase epitaxy (LPE), are presented.
References
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Optical Processes in Semiconductors
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Journal ArticleDOI
Energy gap versus alloy composition and temperature in Hg1−xCdxTe
TL;DR: In this article, the authors used the data from 22 different studies to derive a new empirical expression for the energy band gap (Eg) of Hg1−xCdxTe: Eg =−0.302+1.832x3.