Infrared photoluminescence on molecular beam epitaxially grown Hg1-xCdxTe layers
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In this paper, the Fourier transform photoluminescence of Hg1-xCdxTe layers with 0.25 <x<0.93 was investigated in the spectral range from 1 eV to 1.5 eV.Abstract:
Hg1-xCdxTe is an important material for infrared device technology. Despite a variety of investigations on molecular beam epitaxially (MBE) grown Hg-based superlattices and modulation-doped structures, little attention has been paid to the study of the photoluminescence properties of the constituent materials. The authors report on a systematic study of infrared photoluminescene on Hg1-xCdxTe layers grown by MBE. The Fourier transform photoluminescence of Hg1-xCdxTe layers with 0.25<x<0.93 grown on (110) and (211) GaAs was investigated in the spectral range from 01 eV to 1.5 eV. Emission lines were observed with a full width at half maximum down to 15 meV. Photoluminescence and transmission properties are compared over the temperature range from 4.2 K to 300 K. The possible influence of Burstein-Moss shift, impurity bands and exponential band tails are discussed. Photoluminescence at high temperatures originates from band-to-band transitions. However, low temperature photoluminescence can be attributed either to impurity bands or to additional states due to band tails.read more
Citations
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References
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Near‐band‐gap photoluminescence of Hg1−xCdxTe
TL;DR: In this paper, bound-exciton luminescence was observed in HgCdTe samples with x=0.32 and 0.48 for temperatures between 5 and 30 K.
Journal ArticleDOI
Photo‐ and cathodoluminescence of Cd0.3Hg0.7Te alloys
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Carrier localization in low-bandgap Hg1-xCdxTe crystals, studied by photoluminescence
TL;DR: In this article, the Fourier transform photoluminescence spectra on bulk Hg1-xCdxTe were measured using a double-modulation technique and the dependence of the luminescence spectrum on temperature and excitation density has been studied.
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Auger and radiative transition rates for acceptor bound excitons in direct-gap semiconductors
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Band edge absorption in CdxHg1−xTe grown by metal-organic vapour phase epitaxy
TL;DR: The first absorption coefficient spectra determined in the region of the fundamental band edge of metal-organic vapour phase grown CdxHg1−xTe (CMT) with x between 0.2 and 0.3 are presented in this paper.