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Perovskite light-emitting diodes based on spontaneously formed submicrometre-scale structures

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TLDR
The formation of submicrometre-scale structure in perovskite light-emitting diodes can raise their external quantum efficiency beyond 20%, suggesting the possibility of both high efficiency and high brightness.
Abstract
Light-emitting diodes (LEDs), which convert electricity to light, are widely used in modern society—for example, in lighting, flat-panel displays, medical devices and many other situations. Generally, the efficiency of LEDs is limited by nonradiative recombination (whereby charge carriers recombine without releasing photons) and light trapping1–3. In planar LEDs, such as organic LEDs, around 70 to 80 per cent of the light generated from the emitters is trapped in the device4,5, leaving considerable opportunity for improvements in efficiency. Many methods, including the use of diffraction gratings, low-index grids and buckling patterns, have been used to extract the light trapped in LEDs6–9. However, these methods usually involve complicated fabrication processes and can distort the light-output spectrum and directionality6,7. Here we demonstrate efficient and high-brightness electroluminescence from solution-processed perovskites that spontaneously form submicrometre-scale structures, which can efficiently extract light from the device and retain wavelength- and viewing-angle-independent electroluminescence. These perovskites are formed simply by introducing amino-acid additives into the perovskite precursor solutions. Moreover, the additives can effectively passivate perovskite surface defects and reduce nonradiative recombination. Perovskite LEDs with a peak external quantum efficiency of 20.7 per cent (at a current density of 18 milliamperes per square centimetre) and an energy-conversion efficiency of 12 per cent (at a high current density of 100 milliamperes per square centimetre) can be achieved—values that approach those of the best-performing organic LEDs. The formation of submicrometre-scale structure in perovskite light-emitting diodes can raise their external quantum efficiency beyond 20%, suggesting the possibility of both high efficiency and high brightness.

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Citations
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Journal ArticleDOI

Effectiveness of Solvent Vapor Annealing on Optoelectronic Properties for Quasi-2D Organic–Inorganic Hybrid Perovskite Light-Emitting Diodes

TL;DR: The postprocessing method such as solvent vapor annealing (SVA) can be effective for the fabrication of high-quality quasi-two-dimensional (quasi-2D) organic-inorganic hybrid perovskites (OIHPs).

The evolution and future of metal halide perovskite-based optoelectronic devices

TL;DR: In this article, the development roadmap of perovskite-based optoelectronic devices is reviewed and discussed by summarizing the past milestone findings and strategies, as well as ongoing research of pervskite solar cells, LEDs, and photodetectors (PDs).
Journal ArticleDOI

High-Performance Perovskite Light-Emitting Diodes with Surface Passivation of CsPbBrxI3-x Nanocrystals via Antisolvent-Triggered Ion-Exchange.

TL;DR: Through the LMPT method, the optoelectronic properties of red-emitting PeNCs are dramatically improved resulting in the PLQY of 88.7% at 637 ± 2 nm emission with increased carrier lifetime from 20.77 ns to 31.52 ns.
References
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Journal ArticleDOI

Bright light-emitting diodes based on organometal halide perovskite

TL;DR: It is shown, using photoluminescence studies, that radiative bimolecular recombination is dominant at higher excitation densities, Hence, the quantum efficiencies of the perovskite light-emitting diodes increase at higher current densities.
Journal ArticleDOI

A hole-conductor-free, fully printable mesoscopic perovskite solar cell with high stability

TL;DR: A perovskite solar cell that uses a double layer of mesoporous TiO2 and ZrO2 as a scaffold infiltrated with perovSkite and does not require a hole-conducting layer is fabricated and achieves a certified power conversion efficiency of 12.8%.
Journal ArticleDOI

Solution-processed, high-performance light-emitting diodes based on quantum dots

TL;DR: This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots.
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