Journal ArticleDOI
Perovskite light-emitting diodes based on spontaneously formed submicrometre-scale structures
Yu Cao,Nana Wang,He Tian,Jingshu Guo,Yingqiang Wei,Hong Chen,Yanfeng Miao,Wei Zou,Kang Pan,Yarong He,Hui Cao,You Ke,Mengmeng Xu,Ying Wang,Ming Yang,Kai Du,Zewu Fu,Decheng Kong,Daoxin Dai,Yizheng Jin,Gongqiang Li,Hai Li,Qiming Peng,Jianpu Wang,Wei Huang,Wei Huang,Wei Huang +26 more
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TLDR
The formation of submicrometre-scale structure in perovskite light-emitting diodes can raise their external quantum efficiency beyond 20%, suggesting the possibility of both high efficiency and high brightness.Abstract:
Light-emitting diodes (LEDs), which convert electricity to light, are widely used in modern society—for example, in lighting, flat-panel displays, medical devices and many other situations. Generally, the efficiency of LEDs is limited by nonradiative recombination (whereby charge carriers recombine without releasing photons) and light trapping1–3. In planar LEDs, such as organic LEDs, around 70 to 80 per cent of the light generated from the emitters is trapped in the device4,5, leaving considerable opportunity for improvements in efficiency. Many methods, including the use of diffraction gratings, low-index grids and buckling patterns, have been used to extract the light trapped in LEDs6–9. However, these methods usually involve complicated fabrication processes and can distort the light-output spectrum and directionality6,7. Here we demonstrate efficient and high-brightness electroluminescence from solution-processed perovskites that spontaneously form submicrometre-scale structures, which can efficiently extract light from the device and retain wavelength- and viewing-angle-independent electroluminescence. These perovskites are formed simply by introducing amino-acid additives into the perovskite precursor solutions. Moreover, the additives can effectively passivate perovskite surface defects and reduce nonradiative recombination. Perovskite LEDs with a peak external quantum efficiency of 20.7 per cent (at a current density of 18 milliamperes per square centimetre) and an energy-conversion efficiency of 12 per cent (at a high current density of 100 milliamperes per square centimetre) can be achieved—values that approach those of the best-performing organic LEDs. The formation of submicrometre-scale structure in perovskite light-emitting diodes can raise their external quantum efficiency beyond 20%, suggesting the possibility of both high efficiency and high brightness.read more
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Emerging light-emitting diodes for next-generation data communications
Aobo Ren,Aobo Ren,Hui Wang,Wei Zhang,Jiang Wu,Zhiming Wang,Richard V. Penty,Ian H. White,Ian H. White +8 more
TL;DR: This Review examines the development of emerging semiconductor materials—organic semiconductors, colloidal quantum dots and metal halide perovskites—for light-emitting diodes, considering efforts to improve modulation performance and device efficiency, as well as potential applications in on-chip interconnects and light fidelity (Li-Fi).
Journal ArticleDOI
Surface-Emitting Perovskite Random Lasers for Speckle-Free Imaging
Yilin Liu,Wenhong Yang,Shumin Xiao,Shumin Xiao,Nan Zhang,Yubin Fan,Geyang Qu,Qinghai Song,Qinghai Song +8 more
TL;DR: By directly illuminating the patterns with the SERLs, the notable speckle noises of conventional optical images have been dramatically suppressed and this research shall provide a strategy towards the integrated spectral-free imaging systems.
Journal ArticleDOI
Tin(IV)-Tolerant Vapor-Phase Growth and Photophysical Properties of Aligned Cesium Tin Halide Perovskite (CsSnX3; X = Br, I) Nanowires
Jie Chen,Jie Chen,Ziyu Luo,Yongping Fu,Xiaoxia Wang,Kyle J. Czech,Shaohua Shen,Liejin Guo,John C. Wright,Anlian Pan,Song Jin +10 more
TL;DR: All-inorganic Sn-based halide perovskites (CsSnX3; X = Br, I) have near-infrared optical response and exhibit electronic properties comparable to those of their lead analogues as discussed by the authors.
Journal ArticleDOI
An Improved Strategy for High-Quality Cesium Bismuth Bromine Perovskite Quantum Dots with Remarkable Electrochemiluminescence Activities.
TL;DR: The optical properties and stability of Cs3Bi2Br9 QDs greatly improved in this work, but their electrochemical behaviors and ECL natures were also investigated systematically for the first time, demonstrating the significant potential to extend this environmentally friendly bismuth-based perovskite into the ECL domain.
Journal ArticleDOI
Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr<sub>3</sub> quantum dots
TL;DR: In this paper , a simple strategy to synthesize excellent stability and efficient emission of CsPbBr3 QDs by using 2-hexyldecanoic acid (DA) as a ligand to replace the regular oleic acid ligand was proposed.
References
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Journal ArticleDOI
Bright light-emitting diodes based on organometal halide perovskite
Zhi-Kuang Tan,Reza Saberi Moghaddam,May Ling Lai,Pablo Docampo,Ruben Higler,Felix Deschler,Michael Price,Aditya Sadhanala,Luis M. Pazos,Dan Credgington,Fabian C. Hanusch,Thomas Bein,Henry J. Snaith,Richard H. Friend +13 more
TL;DR: It is shown, using photoluminescence studies, that radiative bimolecular recombination is dominant at higher excitation densities, Hence, the quantum efficiencies of the perovskite light-emitting diodes increase at higher current densities.
Journal ArticleDOI
A hole-conductor-free, fully printable mesoscopic perovskite solar cell with high stability
Anyi Mei,Xiong Li,Linfeng Liu,Zhiliang Ku,Tongfa Liu,Yaoguang Rong,Mi Xu,Min Hu,Jiangzhao Chen,Ying Yang,Michael Grätzel,Hongwei Han +11 more
TL;DR: A perovskite solar cell that uses a double layer of mesoporous TiO2 and ZrO2 as a scaffold infiltrated with perovSkite and does not require a hole-conducting layer is fabricated and achieves a certified power conversion efficiency of 12.8%.
Journal ArticleDOI
Solution-processed, high-performance light-emitting diodes based on quantum dots
Xingliang Dai,Zhenxing Zhang,Yizheng Jin,Yuan Niu,Hujia Cao,Xiaoyong Liang,Liwei Chen,Jianpu Wang,Xiaogang Peng +8 more
TL;DR: This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots.
Journal ArticleDOI
A Universal Method to Produce Low―Work Function Electrodes for Organic Electronics
Yinhua Zhou,Canek Fuentes-Hernandez,Jae Won Shim,Jens Meyer,Anthony J. Giordano,Hong Li,Paul Winget,Theodoros A. Papadopoulos,Hyeunseok Cheun,Jungbae Kim,Mathieu Fenoll,Mathieu Fenoll,Amir Dindar,Wojciech Haske,Ehsan Najafabadi,Talha M. Khan,Hossein Sojoudi,Stephen Barlow,Samuel Graham,Jean-Luc Brédas,Seth R. Marder,Antoine Kahn,Bernard Kippelen +22 more
TL;DR: It is shown that surface modifiers based on polymers containing simple aliphatic amine groups substantially reduce the work function of conductors including metals, transparent conductive metal oxides, conducting polymers, and graphene.