scispace - formally typeset
Open AccessJournal ArticleDOI

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

Reads0
Chats0
TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.
Abstract
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...

read more

Citations
More filters
Journal ArticleDOI

Hexagonal Boron Nitride Nanosheets Protect Exfoliated Black Phosphorus Layers from Ambient Oxidation

TL;DR: In this article , a drop-casting hexagonal boron nitride (h−BN) nanosheets on phosphorene was proposed to prevent spontaneous oxidation of 2D materials.
Journal ArticleDOI

Identification of Ubiquitously Present Polymeric Adlayers on 2D Transition Metal Dichalcogenides

TL;DR: In this article , the ubiquitous presence of polymeric adlayers on top of layered transition metal dichalcogenides (TMDs) is reported, which can be identified with highly resolved time-of-flight secondary ion mass spectrometry (TOF-SIMS).
Dissertation

Fabrication and characterisation of air-sensitive InSe based heterostructure devices

TL;DR: In this paper, a methodology is established using the inert argon environment of a glovebox to fabricate and characterise various air-sensitive materials using optical and charge transport measurements.
Journal ArticleDOI

Visualization of Macroscopic Ising Superconducting State in Superconductor‐Graphene Junctions

TL;DR: In this article , a scanning tunneling microscopy study of Ising superconductivity in single-layer (SL) NbSe2 island and its long-range proximity effect to the adjacent graphene with high spatial and energy resolution is reported.
References
More filters
Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Van der Waals heterostructures

TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI

Black phosphorus field-effect transistors

TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI

Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Journal ArticleDOI

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
Related Papers (5)