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Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.
Abstract
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...

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Citations
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Journal ArticleDOI

Direct Visualization of Large-Scale Intrinsic Atomic Lattice Structure and Its Collective Anisotropy in Air-Sensitive Monolayer 1T'- WTe2.

TL;DR: In this article, a large-scale intact lattice structure of air-sensitive monolayer 1T'-WTe2 is directly visualized by atom-resolved scanning transmission electron microscopy.
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Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device

TL;DR: In this paper , a review summarizes the optimized dry transfer methods, which paves the way towards high-quality 2D material heterostructures with optimized interfaces, which also lead to new physical phenomena while enable novel optoelectronic applications on artificial van der Waals (vdW), which are discussed in the last part of this review.
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Multiple mechanisms of the low temperature photoresponse in niobium diselenide

TL;DR: In this paper, the photoresponse generated in homogenous NbSe2 nano-flakes near the superconducting critical temperature (Tc) was investigated and three distinctive mechanisms of the photoresponse were established, including the photo-induced phase transition from the super-conducting to normal state, which is tunable by the bias voltage and consistent with the observation via the electrical transport characterization.
Journal ArticleDOI

Quasi-two-dimensional NaCl crystals encapsulated between graphene sheets and their decomposition under an electron beam.

TL;DR: In this paper, quasi-two-dimensional (2D) sodium chloride (NaCl) crystals of various lateral sizes between graphene sheets were manufactured via supersaturation from a saline solution, and they were used for in-situ investigations of the crystals and their decomposition under an 80kV electron beam.
Journal ArticleDOI

Simple fabrication method for atomically-thin crystal devices with polymer passivation

TL;DR: In this article, the authors developed a simple procedure for fabricating the electronic devices based on air-sensitive crystals with polymer passivation using a mechanical transfer method combined with regular electron-beam lithography.
References
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Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Van der Waals heterostructures

TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI

Black phosphorus field-effect transistors

TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI

Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Journal ArticleDOI

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
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