Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
Yang Cao,Artem Mishchenko,Geliang Yu,Ekaterina Khestanova,A. P. Rooney,Eric Prestat,Andrey V. Kretinin,Peter Blake,Moshe Ben Shalom,Colin R. Woods,J. Chapman,Geetha Balakrishnan,Irina V. Grigorieva,Konstantin S. Novoselov,Benjamin A. Piot,Marek Potemski,Kenji Watanabe,T. Taniguchi,Sarah J. Haigh,Andre K. Geim,Roman V. Gorbachev +20 more
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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.Abstract:
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...read more
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Journal ArticleDOI
Strong-field nonlinear optical properties of monolayer black phosphorus
Zi-Yu Chen,Rui Qin +1 more
TL;DR: In this paper, a nonperturbative high harmonic generation (HHG) in monolayer black phosphorus (BP) has been shown to exhibit extraordinary HHG properties, with clear advantages over three major types of 2D materials under intensive study, i.e., semimetallic graphene, semiconducting MoS$_2$, and insulating hexagonal boron nitride, in terms of HHG cutoff energy and spectral intensity.
Book ChapterDOI
Black Phosphorus-Based Nanodevices
TL;DR: The main characteristics of black phosphorus such as a strong thickness-dependent band structure or marked in-plane anisotropy are discussed, and the recent works applying black phosphorus for electronic, optics, and mechanical nanodevices are summarized.
Journal ArticleDOI
Shallowing interfacial carrier trap in transition metal dichalcogenide heterostructures with interlayer hybridization
Xu Wu,Xu Wu,Jingsi Qiao,Liwei Liu,Yan Shao,Zhong-Liu Liu,Linfei Li,Zhi-Li Zhu,Cong Wang,Zhixin Hu,Wei Ji,Yeliang Wang,Yeliang Wang,Yeliang Wang,Hong-Jun Gao,Hong-Jun Gao +15 more
TL;DR: In this paper, the authors proposed a technique to suppress the carrier trap that uses enhanced interlayer hybridization to saturate dangling-bond states, as demonstrated in a strongly interlayer-coupled monolayer-bilayer PtSe2 heterostructure.
Posted Content
SnSe monolayer: Super-flexible, auxetic material with ultralow lattice thermal conductivity and ultrahigh hole mobility
TL;DR: In this article, the authors found that SnSe monolayer is an indirect band gap 1.45 eV semiconductor with many outstanding properties, including a large negative Poisson's ratio of -0.17, a very low lattice thermal conductivity below 3 Wm-1K-1, and a high hole mobility of order 10000 cm2V-1S-1.
Journal ArticleDOI
Breathing modes in few-layer MoTe 2 activated by h-BN encapsulation
M. Grzeszczyk,Maciej R. Molas,Miroslav Bartos,Miroslav Bartos,Karol Nogajewski,Marek Potemski,Marek Potemski,Adam Babiński +7 more
TL;DR: In this paper, the authors investigated low-energy Raman scattering spectra of bi-and trilayer MoTe2 and found that three breathing modes are observed in the Raman spectra.
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TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.