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Open AccessJournal ArticleDOI

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.
Abstract
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...

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Citations
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Journal ArticleDOI

Strong-field nonlinear optical properties of monolayer black phosphorus

TL;DR: In this paper, a nonperturbative high harmonic generation (HHG) in monolayer black phosphorus (BP) has been shown to exhibit extraordinary HHG properties, with clear advantages over three major types of 2D materials under intensive study, i.e., semimetallic graphene, semiconducting MoS$_2$, and insulating hexagonal boron nitride, in terms of HHG cutoff energy and spectral intensity.
Book ChapterDOI

Black Phosphorus-Based Nanodevices

TL;DR: The main characteristics of black phosphorus such as a strong thickness-dependent band structure or marked in-plane anisotropy are discussed, and the recent works applying black phosphorus for electronic, optics, and mechanical nanodevices are summarized.
Journal ArticleDOI

Shallowing interfacial carrier trap in transition metal dichalcogenide heterostructures with interlayer hybridization

TL;DR: In this paper, the authors proposed a technique to suppress the carrier trap that uses enhanced interlayer hybridization to saturate dangling-bond states, as demonstrated in a strongly interlayer-coupled monolayer-bilayer PtSe2 heterostructure.
Posted Content

SnSe monolayer: Super-flexible, auxetic material with ultralow lattice thermal conductivity and ultrahigh hole mobility

TL;DR: In this article, the authors found that SnSe monolayer is an indirect band gap 1.45 eV semiconductor with many outstanding properties, including a large negative Poisson's ratio of -0.17, a very low lattice thermal conductivity below 3 Wm-1K-1, and a high hole mobility of order 10000 cm2V-1S-1.
Journal ArticleDOI

Breathing modes in few-layer MoTe 2 activated by h-BN encapsulation

TL;DR: In this paper, the authors investigated low-energy Raman scattering spectra of bi-and trilayer MoTe2 and found that three breathing modes are observed in the Raman spectra.
References
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Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Van der Waals heterostructures

TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI

Black phosphorus field-effect transistors

TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI

Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Journal ArticleDOI

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
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