Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
Yang Cao,Artem Mishchenko,Geliang Yu,Ekaterina Khestanova,A. P. Rooney,Eric Prestat,Andrey V. Kretinin,Peter Blake,Moshe Ben Shalom,Colin R. Woods,J. Chapman,Geetha Balakrishnan,Irina V. Grigorieva,Konstantin S. Novoselov,Benjamin A. Piot,Marek Potemski,Kenji Watanabe,T. Taniguchi,Sarah J. Haigh,Andre K. Geim,Roman V. Gorbachev +20 more
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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.Abstract:
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...read more
Citations
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References
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TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
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Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.