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Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.
Abstract
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...

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Citations
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Journal ArticleDOI

Nontrivial Doping Evolution of Electronic Properties in Ising‐Superconducting Alloys (Adv. Mater. 26/2022)

TL;DR: In this paper , the atomic-scale evolution of the electronic ground state of a monolayer of Nb1-δ Moδ Se2 across the entire alloy composition range using low-temperature scanning tunneling microscopy and spectroscopy (STM/STS).
Dissertation

III-VI metal chalcogenide semiconductor nanosheets and heterostructures

Garry W. Mudd
TL;DR: In this paper, the authors investigated the properties of III-VI metal chalcogenide semiconductor nanosheets and demonstrated their capability to enhance graphene-based optoelectronics.
Journal ArticleDOI

Strongly Absorbing Nanoscale Infrared Domains within Strained Bubbles at hBN-Graphene Interfaces.

TL;DR: Graphene has great potential for use in infrared (IR) nanodevices as discussed by the authors, and at these length scales, nanoscale features and their interaction with light can be expected to play a significant role in device development.
Journal ArticleDOI

FeTe 0.55 Se 0.45 van der Waals tunneling devices

TL;DR: In this article, the authors report on fabrication of tunneling devices integrating van der Waals materials, measuring transport properties as well as tunneling spectra at variable magnetic fields and temperatures down to 35 mK.
Journal ArticleDOI

A predictive model for high-frequency operation of two-dimensional transistors from first-principles

TL;DR: A compact device model for phosphorene-based transistor that takes into account its band structure anisotropy as well as the carrier inertia, which is crucial for high-frequency operation is developed and found that channel orientation has a strong impact on both the low and high frequency conductances.
References
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Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Van der Waals heterostructures

TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI

Black phosphorus field-effect transistors

TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI

Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Journal ArticleDOI

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
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