Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
Yang Cao,Artem Mishchenko,Geliang Yu,Ekaterina Khestanova,A. P. Rooney,Eric Prestat,Andrey V. Kretinin,Peter Blake,Moshe Ben Shalom,Colin R. Woods,J. Chapman,Geetha Balakrishnan,Irina V. Grigorieva,Konstantin S. Novoselov,Benjamin A. Piot,Marek Potemski,Kenji Watanabe,T. Taniguchi,Sarah J. Haigh,Andre K. Geim,Roman V. Gorbachev +20 more
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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.Abstract:
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...read more
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Surface chemistry of black phosphorus under a controlled oxidative environment
TL;DR: The investigation of BP oxidation and the reaction mechanism based on the x-ray photoelectron spectroscopy data are reported and the electrical performance of BP FETs with atomic layer deposition (ALD) dielectric passivation or h-BN passivation formed in a glove-box environment are presented.
Journal ArticleDOI
Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility
TL;DR: In this article, a new two-dimensional (2D) atomic material tin selenide monolayer (coined as tinselenidene) is predicted to be a semiconductor with an indirect gap (~1.45 eV) and a high hole mobility (of order 10000 cm(2)V(-1)S(-1), and will bear an indirect-direct gap transition under a rather low strain (<0.5
Journal ArticleDOI
Two-dimensional superconductors with atomic-scale thickness
TL;DR: In this article, a review of recent progress in two-dimensional superconductors with atomic-scale thicknesses is reviewed mainly from the experimental point of view, which involve a variety of materials and forms: elemental-metal ultrathin films and atomic layers on semiconductor surfaces; interfaces and superlattices of heterostructures made of cuprates, perovskite oxides, and rare-earth metal heavy-fermion compounds; interfaces of electric-double-layer transistors; graphene and atomic sheets of transition-metal dichalcogenide;
Journal ArticleDOI
Highly crystalline 2D superconductors
TL;DR: In this paper, a review on the recent developments of highly-crystalline 2D superconductors and a series of unprecedented physical properties discovered in these systems is presented, highlighting the quantum metallic state (or possible metallic ground state), the quantum Griffiths phase in out-of-plane magnetic fields, and the superconducting state maintained in anomalously large inplane magnetic field.
Journal ArticleDOI
Capping Black Phosphorene by h-BN Enhances Performances in Anodes for Li and Na Ion Batteries
TL;DR: In this paper, the binding energy of Li/Na in the h-BN/black-Pn heterostructure is greatly enhanced (2.81 eV/2.55 eV) vis-a-vis pristine Pn, along with reduction in the barrier for movement of LI/Na within the layers.
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TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.