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Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.
Abstract
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...

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Journal ArticleDOI

Surface chemistry of black phosphorus under a controlled oxidative environment

TL;DR: The investigation of BP oxidation and the reaction mechanism based on the x-ray photoelectron spectroscopy data are reported and the electrical performance of BP FETs with atomic layer deposition (ALD) dielectric passivation or h-BN passivation formed in a glove-box environment are presented.
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Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility

TL;DR: In this article, a new two-dimensional (2D) atomic material tin selenide monolayer (coined as tinselenidene) is predicted to be a semiconductor with an indirect gap (~1.45 eV) and a high hole mobility (of order 10000 cm(2)V(-1)S(-1), and will bear an indirect-direct gap transition under a rather low strain (<0.5
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Two-dimensional superconductors with atomic-scale thickness

TL;DR: In this article, a review of recent progress in two-dimensional superconductors with atomic-scale thicknesses is reviewed mainly from the experimental point of view, which involve a variety of materials and forms: elemental-metal ultrathin films and atomic layers on semiconductor surfaces; interfaces and superlattices of heterostructures made of cuprates, perovskite oxides, and rare-earth metal heavy-fermion compounds; interfaces of electric-double-layer transistors; graphene and atomic sheets of transition-metal dichalcogenide;
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Highly crystalline 2D superconductors

TL;DR: In this paper, a review on the recent developments of highly-crystalline 2D superconductors and a series of unprecedented physical properties discovered in these systems is presented, highlighting the quantum metallic state (or possible metallic ground state), the quantum Griffiths phase in out-of-plane magnetic fields, and the superconducting state maintained in anomalously large inplane magnetic field.
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Capping Black Phosphorene by h-BN Enhances Performances in Anodes for Li and Na Ion Batteries

TL;DR: In this paper, the binding energy of Li/Na in the h-BN/black-Pn heterostructure is greatly enhanced (2.81 eV/2.55 eV) vis-a-vis pristine Pn, along with reduction in the barrier for movement of LI/Na within the layers.
References
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Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Van der Waals heterostructures

TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI

Black phosphorus field-effect transistors

TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
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Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Journal ArticleDOI

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
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