Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
Yang Cao,Artem Mishchenko,Geliang Yu,Ekaterina Khestanova,A. P. Rooney,Eric Prestat,Andrey V. Kretinin,Peter Blake,Moshe Ben Shalom,Colin R. Woods,J. Chapman,Geetha Balakrishnan,Irina V. Grigorieva,Konstantin S. Novoselov,Benjamin A. Piot,Marek Potemski,Kenji Watanabe,T. Taniguchi,Sarah J. Haigh,Andre K. Geim,Roman V. Gorbachev +20 more
Reads0
Chats0
TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.Abstract:
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...read more
Citations
More filters
Journal ArticleDOI
Catalysis with two-dimensional materials and their heterostructures
TL;DR: Recent advances in the use of graphene and other 2D materials in catalytic applications are reviewed, focusing in particular on the catalytic activity of heterogeneous systems such as van der Waals heterostructures (stacks of several 2D crystals).
Journal ArticleDOI
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Denis A. Bandurin,Anastasia V. Tyurnina,Anastasia V. Tyurnina,Geliang Yu,Artem Mishchenko,Viktor Zólyomi,Sergey V. Morozov,Roshan Krishna Kumar,Roman V. Gorbachev,Zakhar R. Kudrynskyi,Sergio Pezzini,Zakhar D. Kovalyuk,Uli Zeitler,Konstantin S. Novoselov,Amalia Patanè,Laurence Eaves,Irina V. Grigorieva,Vladimir I. Fal'ko,Andre K. Geim,Yang Cao +19 more
TL;DR: Encapsulated 2D InSe expands the family of graphene-like semiconductors and, in terms of quality, is competitive with atomically thin dichalcogenides and black phosphorus.
Journal ArticleDOI
Ising pairing in superconducting NbSe2 atomic layers
Xiaoxiang Xi,Zefang Wang,Weiwei Zhao,Ju-Hyun Park,Kam Tuen Law,Helmuth Berger,László Forró,Jie Shan,Kin Fai Mak +8 more
TL;DR: In this article, the superconducting properties of NbSe2 as it approaches the monolayer limit are investigated by means of magnetotransport measurements, uncovering evidence of spin-momentum locking.
Journal ArticleDOI
Recent progress in 2D group-VA semiconductors: from theory to experiment
Shengli Zhang,Shiying Guo,Zhongfang Chen,Yeliang Wang,Hong-Jun Gao,Julio Gómez-Herrero,Pablo Ares,Félix Zamora,Zhen Zhu,Haibo Zeng +9 more
TL;DR: In this review, the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials are explored, and perspectives and challenges for the future of this emerging field are offered.
Journal ArticleDOI
Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal
Sanfeng Wu,Valla Fatemi,Quinn Gibson,Kenji Watanabe,Takashi Taniguchi,Robert J. Cava,Pablo Jarillo-Herrero +6 more
TL;DR: The QSHE is established in monolayer tungsten ditelluride (WTe2) at temperatures much higher than in semiconductor heterostructures and allow for exploring topological phases in atomically thin crystals.
References
More filters
Journal ArticleDOI
Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures
Nathaniel Gillgren,Darshana Wickramaratne,Yanmeng Shi,Tim Espiritu,Jiawei Yang,Jin Hu,Jiang Wei,Xue Liu,Zhiqiang Mao,Kenji Watanabe,Takashi Taniguchi,Marc Bockrath,Yafis Barlas,Roger K. Lake,Chun Ning Lau +14 more
TL;DR: In this article, fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional edge contacts are reported, which display ambipolar behavior, a gate-dependent metal?insulator transition, and mobility up to 4000 cm2 V?1 s?1.
Journal ArticleDOI
Superconductivity in Ultrathin Nb Se 2 Layers
TL;DR: In this paper, the superconducting resistive transition of the layer compound Nb${\mathrm{Se}}_{2}$ has been observed for crystals a few layers thick.
Journal ArticleDOI
Two-dimensional magnetotransport in a black phosphorus naked quantum well
V. Tayari,N. Hemsworth,Ibrahim Fakih,Alexandre Favron,Etienne Gaufrès,Guillaume Gervais,Richard Martel,Thomas Szkopek +7 more
TL;DR: This work fabricates bP-naked quantum wells in a back-gated field effect transistor geometry and demonstrates that 2D electronic structure and 2D atomic structure are independent, advantageous for materials that become increasingly reactive in the few-layer limit such as bP.
Journal ArticleDOI
Electric field effect on superconductivity in atomically thin flakes of NbSe 2
TL;DR: In this paper, the electric field effect on superconductivity in atomically thin flakes of NbSe, prepared by mechanical exfoliation, has been studied and it has been shown that these flakes are superconducting down to a thickness of a single unit cell consisting of two molecular layers.
Journal ArticleDOI
Superconductivity in two-dimensional NbSe2 field effect transistors
M.S. El-Bana,M.S. El-Bana,Daniel Wolverson,Saverio Russo,Geetha Balakrishnan,Don McK. Paul,Simon J. Bending +6 more
TL;DR: In this article, the authors investigated superconductivity in few molecular layer NbSe2 field effect transistors and found that the conductance in the normal state and transition temperature depend weakly on the gate voltage with both conductivity and Tc decreasing as the electron concentration is increased.