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Open AccessJournal ArticleDOI

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.
Abstract
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...

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Proceedings ArticleDOI

Phosphorene FETs — Promising transistors based on a few layers of phosphorus atoms

TL;DR: In this paper, the authors review the emergence and progress of phosphorene FETs, all within about a year, and show that back-gated FET can be reduced to sub-micron range, passivation by high-k dielectrics or hexagonal boron nitride was demonstrated with temporal, thermal and mechanical stability, ohmic contact was achieved down to cryogenic temperatures, and cutoff frequencies was pushed above 10 GHz.
Journal ArticleDOI

Double carrier transport in electron doped region in black phosphorus FET

TL;DR: In this paper, double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region, where the gate voltage dependence of conductivity exhibits an anomalous shoulder structure.
Journal ArticleDOI

The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus

TL;DR: In this article, the impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus, using a first-principles method in the framework of density functional theory, is investigated.
Journal ArticleDOI

Demonstration of passively Q-switched and mode-locked operations through dispersion control in Er-doped fiber lasers with a cylindrite-based saturable absorber

TL;DR: In this paper , cylindrite nanosheets are prepared successfully by the liquid phase exfoliation (LPE) method and nonlinear optical absorption properties are studied firstly in advance of exploring the potential and feasibility in the field of ultrashort pulse fiber lasers.
References
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Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Van der Waals heterostructures

TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI

Black phosphorus field-effect transistors

TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
Journal ArticleDOI

Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Journal ArticleDOI

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
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