Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
Yang Cao,Artem Mishchenko,Geliang Yu,Ekaterina Khestanova,A. P. Rooney,Eric Prestat,Andrey V. Kretinin,Peter Blake,Moshe Ben Shalom,Colin R. Woods,J. Chapman,Geetha Balakrishnan,Irina V. Grigorieva,Konstantin S. Novoselov,Benjamin A. Piot,Marek Potemski,Kenji Watanabe,T. Taniguchi,Sarah J. Haigh,Andre K. Geim,Roman V. Gorbachev +20 more
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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.Abstract:
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...read more
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Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
TL;DR: In this article, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field effect transistors for an initial period of 18 h, before degrading to previously reported levels.
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Characterization methods dedicated to nanometer-thick hBN layers
TL;DR: In this article, a characterization procedure based on optical spectroscopies, namely cathodoluminescence and Raman, with the additional support of structural analysis conducted by transmission electron microscopy is presented.
Journal ArticleDOI
Electronic Structure and the Properties of Phosphorene Systems
TL;DR: A single atomic layer of black phosphorus, phosphorene, was experimentally realized in 2014 as mentioned in this paper, which has a puckered honeycomb lattice structure and a semiconducting electronic structure.
Journal ArticleDOI
Electronic structure of 2H-NbSe2 single-layers in the CDW state
TL;DR: In this article, a density functional theory study of single-layer NbSe2 single-layers in the normal nonmodulated and the 3 × 3 CDW states is reported, showing that the CDW barely affects the Fermi surface of the system, thus ruling out a nesting mechanism as the driving force for the modulation.
Journal ArticleDOI
Simple fabrication of air-stable black phosphorus heterostructures with large-area hBN sheets grown by chemical vapor deposition method
TL;DR: In this paper, a facile and general method to passivate thin black phosphorus (BP) flakes with large-area high-quality monolayer hexagonal boron nitride (hBN) sheets grown by the chemical vapor deposition (CVD) method was developed.
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TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
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Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
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Journal ArticleDOI
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.