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Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.
Abstract
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...

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Journal ArticleDOI

The Prospect of Two-Dimensional Heterostructures: A Review of Recent Breakthroughs

TL;DR: In this paper, a comprehensive review of recent advances in heterostructures of two-dimensional (2D) layered materials for future electronic and optoelectronic applications is presented.
Journal ArticleDOI

3D Manipulation of 2D Materials Using Microdome Polymer

TL;DR: In this article, the authors demonstrate 3D mechanical manipulations of 2D materials using a microdome polymer via in situ real-time observation with an optical microscope using a dimethylpolysiloxane (PDMS)-based MDP, which is covered with polyvinyl chloride (PVC) adhesion layer.
Journal ArticleDOI

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

TL;DR: In this article, the basic characteristics of b-AsP and b-P are compared, including crystal structure, optical properties, band structure, electrical properties and stability, and summarize the update progress of BAsP in photo detection, including representatives of phototransistor and photodiode devices.
Journal ArticleDOI

Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles

TL;DR: In this article, the intrinsic carrier transport dynamics in phosphorene were theoretically examined using a density functional theory treatment, and the low-field mobility and the saturation velocity were characterized for both electrons and holes in the monolayer and bilayer structures.
References
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Journal ArticleDOI

Two-dimensional atomic crystals

TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI

Van der Waals heterostructures

TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI

Black phosphorus field-effect transistors

TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
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Boron nitride substrates for high-quality graphene electronics

TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Journal ArticleDOI

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.
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