Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
Yang Cao,Artem Mishchenko,Geliang Yu,Ekaterina Khestanova,A. P. Rooney,Eric Prestat,Andrey V. Kretinin,Peter Blake,Moshe Ben Shalom,Colin R. Woods,J. Chapman,Geetha Balakrishnan,Irina V. Grigorieva,Konstantin S. Novoselov,Benjamin A. Piot,Marek Potemski,Kenji Watanabe,T. Taniguchi,Sarah J. Haigh,Andre K. Geim,Roman V. Gorbachev +20 more
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TLDR
A remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere, which offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.Abstract:
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly ex...read more
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Efficient Self‐Driven Photodetectors Featuring a Mixed‐Dimensional van der Waals Heterojunction Formed from a CdS Nanowire and a MoTe2 Flake
TL;DR: A mixed-dimensional van der Waals (vdW) heterojunction comprising a 1D n-type Ga-doped CdS nanowire and a 2D p-type MoTe2 flake is demonstrated; the corresponding photovoltaic device exhibits an outstanding conversion efficiency.
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Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS$_3$: electron doping and plasmons
TL;DR: In this paper, the effect of spin-orbit coupling in the band dispersion was analyzed and the DFT effective masses were used to study the plasmon spectrum from an effective low energy model.
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Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles
TL;DR: In this paper, the intrinsic carrier transport dynamics in phosphorene were theoretically examined using a density functional theory treatment, and the low-field mobility and the saturation velocity were characterized for both electrons and holes in the monolayer and bilayer structures.
Journal ArticleDOI
Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well
Sergey S. Krishtopenko,Sandra Ruffenach,F. Gonzalez-Posada,Guilhem Boissier,M. Marcinkiewicz,M. A. Fadeev,A. M. Kadykov,V. V. Rumyantsev,S. V. Morozov,Vladimir I. Gavrilenko,Christophe Consejo,Wilfried Desrat,Benoit Jouault,Wojciech Knap,Eric Tournié,Frederic Teppe +15 more
TL;DR: In this article, temperature-dependent terahertz spectroscopy of a three-layer InAs/GaSb/InAs quantum well with inverted-band structure is reported.
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Switching at Less Than 60 mV/Decade with a “Cold” Metal as the Injection Source
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TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
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Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.