How many transistors are in i9 10900k?
Answers from top 10 papers
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| Papers (10) | Insight |
|---|---|
13 Citations | These are the first reported metal gate transistors in the III‐V materials and the first using a nonepitaxial base and laterally seeded overgrowth. |
16 Citations | The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. |
24 Citations | Our results provide clues to better understand oxide transistors and to optimize their performance. |
| Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics. | |
| I–V characteristics of the transistors before and after preparation indicate that the sectioned transistors show a higher leakage current, but are still functionally operational. | |
60 Citations | The data are consistent with the formation of parasitic transistors resulting from the microdose deposited in the gate oxides of these devices by the heavy ions. |
555 Citations | This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors. |
10 Citations | Our conclusions are also supported by the observation of similar activation energies for defects present in transistors of various device geometries. |
18 Citations | Our conclusions are further supported by measuring all currents in the three-terminal configuration of the transistors before and during the breakdown and by using a drain current injection technique. |
| In this paper, we report the first demonstration of high voltage NPN bipolar junction transistors in 4H-SiC. |