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Showing papers on "Fermi energy published in 2018"


Journal ArticleDOI
05 Mar 2018-Nature
TL;DR: The realization of intrinsic unconventional superconductivity is reported—which cannot be explained by weak electron–phonon interactions—in a two-dimensional superlattice created by stacking two sheets of graphene that are twisted relative to each other by a small angle.
Abstract: The behaviour of strongly correlated materials, and in particular unconventional superconductors, has been studied extensively for decades, but is still not well understood. This lack of theoretical understanding has motivated the development of experimental techniques for studying such behaviour, such as using ultracold atom lattices to simulate quantum materials. Here we report the realization of intrinsic unconventional superconductivity-which cannot be explained by weak electron-phonon interactions-in a two-dimensional superlattice created by stacking two sheets of graphene that are twisted relative to each other by a small angle. For twist angles of about 1.1°-the first 'magic' angle-the electronic band structure of this 'twisted bilayer graphene' exhibits flat bands near zero Fermi energy, resulting in correlated insulating states at half-filling. Upon electrostatic doping of the material away from these correlated insulating states, we observe tunable zero-resistance states with a critical temperature of up to 1.7 kelvin. The temperature-carrier-density phase diagram of twisted bilayer graphene is similar to that of copper oxides (or cuprates), and includes dome-shaped regions that correspond to superconductivity. Moreover, quantum oscillations in the longitudinal resistance of the material indicate the presence of small Fermi surfaces near the correlated insulating states, in analogy with underdoped cuprates. The relatively high superconducting critical temperature of twisted bilayer graphene, given such a small Fermi surface (which corresponds to a carrier density of about 1011 per square centimetre), puts it among the superconductors with the strongest pairing strength between electrons. Twisted bilayer graphene is a precisely tunable, purely carbon-based, two-dimensional superconductor. It is therefore an ideal material for investigations of strongly correlated phenomena, which could lead to insights into the physics of high-critical-temperature superconductors and quantum spin liquids.

5,613 citations


Journal ArticleDOI
05 Mar 2018-Nature
TL;DR: It is shown experimentally that when this angle is close to the ‘magic’ angle the electronic band structure near zero Fermi energy becomes flat, owing to strong interlayer coupling, and these flat bands exhibit insulating states at half-filling, which are not expected in the absence of correlations between electrons.
Abstract: A van der Waals heterostructure is a type of metamaterial that consists of vertically stacked two-dimensional building blocks held together by the van der Waals forces between the layers. This design means that the properties of van der Waals heterostructures can be engineered precisely, even more so than those of two-dimensional materials. One such property is the 'twist' angle between different layers in the heterostructure. This angle has a crucial role in the electronic properties of van der Waals heterostructures, but does not have a direct analogue in other types of heterostructure, such as semiconductors grown using molecular beam epitaxy. For small twist angles, the moire pattern that is produced by the lattice misorientation between the two-dimensional layers creates long-range modulation of the stacking order. So far, studies of the effects of the twist angle in van der Waals heterostructures have concentrated mostly on heterostructures consisting of monolayer graphene on top of hexagonal boron nitride, which exhibit relatively weak interlayer interaction owing to the large bandgap in hexagonal boron nitride. Here we study a heterostructure consisting of bilayer graphene, in which the two graphene layers are twisted relative to each other by a certain angle. We show experimentally that, as predicted theoretically, when this angle is close to the 'magic' angle the electronic band structure near zero Fermi energy becomes flat, owing to strong interlayer coupling. These flat bands exhibit insulating states at half-filling, which are not expected in the absence of correlations between electrons. We show that these correlated states at half-filling are consistent with Mott-like insulator states, which can arise from electrons being localized in the superlattice that is induced by the moire pattern. These properties of magic-angle-twisted bilayer graphene heterostructures suggest that these materials could be used to study other exotic many-body quantum phases in two dimensions in the absence of a magnetic field. The accessibility of the flat bands through electrical tunability and the bandwidth tunability through the twist angle could pave the way towards more exotic correlated systems, such as unconventional superconductors and quantum spin liquids.

3,005 citations


Journal Article
TL;DR: In this article, the effects of the twist angle between different layers in a van der Waals heterostructure have been investigated and it was shown that when this angle is close to the magic angle, the electronic band structure near zero Fermi energy becomes flat, owing to strong interlayer coupling.
Abstract: A van der Waals heterostructure is a type of metamaterial that consists of vertically stacked two-dimensional building blocks held together by the van der Waals forces between the layers. This design means that the properties of van der Waals heterostructures can be engineered precisely, even more so than those of two-dimensional materials. One such property is the 'twist' angle between different layers in the heterostructure. This angle has a crucial role in the electronic properties of van der Waals heterostructures, but does not have a direct analogue in other types of heterostructure, such as semiconductors grown using molecular beam epitaxy. For small twist angles, the moire pattern that is produced by the lattice misorientation between the two-dimensional layers creates long-range modulation of the stacking order. So far, studies of the effects of the twist angle in van der Waals heterostructures have concentrated mostly on heterostructures consisting of monolayer graphene on top of hexagonal boron nitride, which exhibit relatively weak interlayer interaction owing to the large bandgap in hexagonal boron nitride. Here we study a heterostructure consisting of bilayer graphene, in which the two graphene layers are twisted relative to each other by a certain angle. We show experimentally that, as predicted theoretically, when this angle is close to the 'magic' angle the electronic band structure near zero Fermi energy becomes flat, owing to strong interlayer coupling. These flat bands exhibit insulating states at half-filling, which are not expected in the absence of correlations between electrons. We show that these correlated states at half-filling are consistent with Mott-like insulator states, which can arise from electrons being localized in the superlattice that is induced by the moire pattern. These properties of magic-angle-twisted bilayer graphene heterostructures suggest that these materials could be used to study other exotic many-body quantum phases in two dimensions in the absence of a magnetic field. The accessibility of the flat bands through electrical tunability and the bandwidth tunability through the twist angle could pave the way towards more exotic correlated systems, such as unconventional superconductors and quantum spin liquids.

1,961 citations


Journal ArticleDOI
TL;DR: Large intrinsic AHE with linear dependence on magnetization in a half-metallic ferromagnet Co3Sn2S2 single crystal with Kagome lattice of Co atoms, arising dominantly from the Weyl fermions is reported.
Abstract: The origin of anomalous Hall effect (AHE) in magnetic materials is one of the most intriguing aspects in condensed matter physics and has been a controversial topic for a long time. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of occupied electronic states. In a magnetic Weyl semimetal with broken time-reversal symmetry, there are significant contributions to Berry curvature around Weyl nodes, possibly leading to a large intrinsic AHE. Here, we report the quite large AHE in the half-metallic ferromagnet Co3Sn2S2 single crystal. By systematically mapping out the electronic structure of Co3Sn2S2 both theoretically and experimentally, we demonstrate that the intrinsic AHE from the Weyl fermions near the Fermi energy is dominating. The intrinsic anomalous Hall conductivity depends linearly on the magnetization and can be reproduced by theoretical simulation, in which the Weyl nodes monotonically move with the constrained magnetic moment on Co atom.

488 citations


Journal ArticleDOI
TL;DR: In this paper, the performance of g-C3N4/BiVO4 was investigated in Z-scheme configuration and the experimental observations were counterchecked with density functional theory simulations.
Abstract: BiVO4 is a considerably promising semiconductor for photoelectrochemical water splitting due to its stability, low cost and moderate band gap. In this research, g-C3N4 was proposed in Z-scheme configuration which boosted the performance of BiVO4 up to four times. The experimental observations were counterchecked with Density Functional Theory (DFT) simulations. A TiO2/BiVO4 heterojunction was developed and its performance was compared with that of g-C3N4/BiVO4. The photocurrent for g-C3N4/BiVO4 was 0.42 mAcm−2 at 1.23 V vs. RHE which was the highest among g-C3N4 based Z-scheme heterojunction devices. Lower charge transfer resistance, higher light absorption and more oxygen vacancy sites were observed for the g-C3N4 based heterojunction. The simulated results attested that g-C3N4 and BiVO4 formed a van der Waals type heterojunction, where an internal electric field facilitated the separation of electron/hole pair at g-C3N4/BiVO4 interface which further restrained the carrier recombination. Both the valence and conduction band edge positions of g-C3N4 and BiVO4 changed with the Fermi energy level. The resulted heterojunction had small effective masses of electrons (0.01 me) and holes (0.10 me) with ideal band edge positions where both CBM and VBM were well above and below the redox potential of water.

275 citations


Journal ArticleDOI
TL;DR: It is demonstrated that 3 × 3 charge-density-wave (CDW) order persists despite distinct changes in the low energy electronic structure highlighted by the reduction in the number of bands crossing the Fermi energy and the corresponding modification of FermI surface topology.
Abstract: We present the electronic characterization of single-layer 1H-TaSe2 grown by molecular beam epitaxy using a combined angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory calculations. We demonstrate that 3 × 3 charge-density-wave (CDW) order persists despite distinct changes in the low energy electronic structure highlighted by the reduction in the number of bands crossing the Fermi energy and the corresponding modification of Fermi surface topology. Enhanced spin-orbit coupling and lattice distortion in the single-layer play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the two-dimensional limit.

166 citations


Journal ArticleDOI
TL;DR: In this paper, a degenerate mixture of a rubidium Bose-Einstein condensate and a potassium Fermi gas was used to produce a long-lived degenerate gas of polar molecules.
Abstract: It has long been expected that quantum degenerate gases of molecules would open access to a wide range of phenomena in molecular and quantum sciences. However, the very complexity that makes ultracold molecules so enticing has made reaching degeneracy an outstanding experimental challenge over the past decade. We now report the production of a Fermi degenerate gas of ultracold polar molecules of potassium--rubidium (KRb). Through coherent adiabatic association in a deeply degenerate mixture of a rubidium Bose-Einstein condensate and a potassium Fermi gas, we produce molecules at temperatures below 0.3 times the Fermi temperature. We explore the properties of this reactive gas and demonstrate how degeneracy suppresses chemical reactions, making a long-lived degenerate gas of polar molecules a reality.

148 citations


Journal ArticleDOI
TL;DR: In this article, the authors proposed minimal models for the Wannier-type second-order topological insulator in two dimensions and the third-order TOPI in three dimensions, which are anisotropic chiral-symmetric two-band models.
Abstract: A higher-order topological insulator (HOTI) is an extended notion of the conventional topological insulator. It belongs to a special class of topological insulators to which the conventional bulk-boundary correspondence is not applicable. Provided the mirror symmetries are present, the bulk topological number is described by the quantized Wannier center located at a high-symmetry point of the crystal. The emergence of corner states is a manifestation of nontrivial topology in the bulk. In this paper we propose minimal models for the Wannier-type second-order topological insulator in two dimensions and the third-order topological insulator in three dimensions. They are anisotropic chiral-symmetric two-band models. It is explicitly shown that the Wannier center is identical to the winding number in the present model, demonstrating that it is indeed a topological quantum number. Finally we point out that the essential physics of phosphorene near the Fermi energy is described by making a perturbation of the Wannier-type HOTI. We predict that these corner states will be observed in the rhombus structure of phosphorene near the Fermi energy around $\ensuremath{-}0.16\phantom{\rule{0.28em}{0ex}}\mathrm{eV}$.

139 citations


Journal ArticleDOI
TL;DR: In this article, the authors measured the low-temperature resistivity of the bi-layer cuprate Bi2212 and found that it exhibits a $T$-linear dependence with the same slope as in the single layer cuprates Bi2201, Nd-LSCO and LSCO, despite their very different Fermi surfaces and structural, superconducting and magnetic properties.
Abstract: The perfectly linear temperature dependence of the electrical resistivity observed as $T \rightarrow$ 0 in a variety of metals close to a quantum critical point is a major puzzle of condensed matter physics . Here we show that $T$-linear resistivity as $T \rightarrow$ 0 is a generic property of cuprates, associated with a universal scattering rate. We measured the low-temperature resistivity of the bi-layer cuprate Bi2212 and found that it exhibits a $T$-linear dependence with the same slope as in the single-layer cuprates Bi2201, Nd-LSCO and LSCO, despite their very different Fermi surfaces and structural, superconducting and magnetic properties. We then show that the $T$-linear coefficient (per CuO$_2$ plane), $A_1$, is given by the universal relation $A_1 T_F = h / 2e^2$, where $e$ is the electron charge, $h$ is the Planck constant and $T_F$ is the Fermi temperature. This relation, obtained by assuming that the scattering rate 1 / $\tau$ of charge carriers reaches the Planckian limit whereby $\hbar / \tau = k_B T$, works not only for hole-doped cuprates but also for electron-doped cuprates despite the different nature of their quantum critical point and strength of their electron correlations.

138 citations


Journal ArticleDOI
TL;DR: Experimental study of the Kondo insulator SmB6 provides an alternative route to realize a Fermi surface in the absence of a conventional FermI liquid as mentioned in this paper. But it requires a large amount of energy.
Abstract: Experimental study of the Kondo insulator SmB6 provides an alternative route to realize a Fermi surface in the absence of a conventional Fermi liquid.

115 citations


Journal ArticleDOI
TL;DR: Spin-polarized band structures reveal that SnOH monolayer exhibits a spin gapless semiconductor (SGS) feature, whereas SnNH is converted to SGS under compressive strain, and a new way for designing topological field transistors in group-IV honeycomb lattices is proposed.
Abstract: A great obstacle for the practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable two-dimensional (2D) materials with a sizable nontrivial band gap, high Curie temperature, and high carrier mobility. Based on first-principles calculations, here, we propose the realizations of these intriguing properties in asymmetry-functionalized 2D SnHN and SnOH lattices. Spin-polarized band structures reveal that SnOH monolayer exhibits a spin gapless semiconductor (SGS) feature, whereas SnNH is converted to SGS under compressive strain. The Curie temperature of SnOH reaches 266 K, as predicted by Monte Carlo simulation, and it is comparable to the room temperature. When the spin and orbital degrees of freedom are allowed to couple, both systems become large-gap QAH insulators with fully spin-polarized half-metallic edge states and higher Fermi velocity of 4.9 × 105 m s-1. These results pave a new way for designing topological field transistors in group-IV honeycomb lattices.

Journal ArticleDOI
TL;DR: In this paper, the role of band bending and superconductor-semiconductor hybridization in a gated single Al-InAs interface using a self-consistent Schrodinger-Poisson approach is investigated.
Abstract: Hybrid superconductor-semiconductor devices are currently one of the most promising platforms for realizing Majorana zero modes. Their topological properties are controlled by the band alignment of the two materials, as well as the electrostatic environment, which are currently not well understood. Here, we pursue to fill in this gap and address the role of band bending and superconductor-semiconductor hybridization in such devices by analyzing a gated single Al-InAs interface using a self-consistent Schrodinger-Poisson approach. Our numerical analysis shows that the band bending leads to an interface quantum well, which localizes the charge in the system near the superconductor-semiconductor interface. We investigate the hybrid band structure and analyze its response to varying the gate voltage and thickness of the Al layer. This is done by studying the hybridization degrees of the individual subbands, which determine the induced pairing and effective $g$-factors. The numerical results are backed by approximate analytical expressions which further clarify key aspects of the band structure. We find that one can obtain states with strong superconductor-semiconductor hybridization at the Fermi energy, but this requires a fine balance of parameters, with the most important constraint being on the width of the Al layer. In fact, in the regime of interest, we find an almost periodic dependence of the hybridization degree on the Al width, with a period roughly equal to the thickness of an Al monolayer. This implies that disorder and shape irregularities, present in realistic devices, may play an important role for averaging out this sensitivity and, thus, may be necessary for stabilizing the topological phase.

Journal ArticleDOI
TL;DR: In this paper, a unified and intuitive physical picture of the ultrafast carrier dynamics and the photoconductivity is presented, combining optical pump-terahertz probe measurements on a gate-tunable graphene device, with numerical calculations using the Boltzmann equation.
Abstract: For many of the envisioned optoelectronic applications of graphene, it is crucial to understand the subpicosecond carrier dynamics immediately following photoexcitation and the effect of photoexcitation on the electrical conductivity—the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations concerning the sign of the photoconductivity, the occurrence and significance of the creation of additional electron-hole pairs, and, in particular, how the relevant processes depend on Fermi energy have been put forward. We present a unified and intuitive physical picture of the ultrafast carrier dynamics and the photoconductivity, combining optical pump–terahertz probe measurements on a gate-tunable graphene device, with numerical calculations using the Boltzmann equation. We distinguish two types of ultrafast photo-induced carrier heating processes: At low (equilibrium) Fermi energy (EF ≲ 0.1 eV for our experiments), broadening of the carrier distribution involves interband transitions (interband heating). At higher Fermi energy (EF ≳ 0.15 eV), broadening of the carrier distribution involves intraband transitions (intraband heating). Under certain conditions, additional electron-hole pairs can be created [carrier multiplication (CM)] for low EF, and hot carriers (hot-CM) for higher EF. The resultant photoconductivity is positive (negative) for low (high) EF, which in our physical picture, is explained using solely electronic effects: It follows from the effect of the heated carrier distributions on the screening of impurities, consistent with the DC conductivity being mostly due to impurity scattering. The importance of these insights is highlighted by a discussion of the implications for graphene photodetector applications.

Journal ArticleDOI
TL;DR: In this article, the authors measured the conductance and map the transmission functions of single molecules at and around the Fermi energy, and studied signatures associated with constructive and destructive interference.
Abstract: Quantum interference can profoundly affect charge transport in single molecules, but experiments can usually measure only the conductance at the Fermi energy. Because in general the most pronounced features of the quantum interference are not located at the Fermi energy, it is highly desirable to probe charge transport in a broader energy range. Here by the method of electrochemical gating, we measure the conductance and map the transmission functions of single molecules at and around the Fermi energy, and study signatures associated with constructive and destructive interference. With the electrochemical gate control, we tune the quantum interference between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO), and directly observe anti-resonance, a distinct feature of destructive interference. By tuning the molecule in and out of anti-resonance, we achieve continuous control of the conductance over 2 orders of magnitude with a subthreshold swing of ~17 mV/dec, features relevant to high-speed and low-power electronics.

Journal ArticleDOI
Yu Zhao1, Xiaoyin Li1, Junyi Liu1, Cunzhi Zhang1, Qian Wang1 
TL;DR: A new 2D anisotropic Dirac cone material, B2S monolayer, identified by using a global structure search method and first-principles calculation combined with a tight-binding model and is found to be stable mechanically, thermally, and dynamically and exhibits a Fermi velocity in the same order of magnitude as that of graphene.
Abstract: Different from the isotropic Dirac cones existing in other two-dimensional (2D) materials, anisotropic Dirac cones have the merit of anisotropic carrier mobility for applications in direction-dependent quantum devices. Motivated by the recent experimental finding of an anisotropic Dirac cone in borophene, here we report a new 2D anisotropic Dirac cone material, B2S monolayer, identified by using a global structure search method and first-principles calculation combined with a tight-binding model. The B2S monolayer is found to be stable mechanically, thermally, and dynamically and exhibits an anisotropic Dirac cone exactly at the Fermi level, showing a Fermi velocity of 106 m/s in the same order of magnitude as that of graphene. Moreover, B2S monolayer is the first anisotropy Dirac cone material with a pristine honeycomb structure stabilized by S in free-standing conditions where each atom has four valence electrons on average being isoelectronic to C. This study would expand the Dirac cone material family...

Journal ArticleDOI
Mingyang Chen1, Xiaoyu Chen1, Huan Yang1, Zengyi Du1, Xiyu Zhu1, Enyu Wang1, Hai-Hu Wen1 
TL;DR: In this paper, it was shown that the energy levels of these CdGM states in FeTe0.55Se0.45 are very stable and that the Fermi energy in the present system is small.
Abstract: Caroli-de Gennes-Matricon (CdGM) states were predicted in 1964 as low-energy excitations within vortex cores of type-II superconductors. In the quantum limit, the energy levels of these states were predicted to be discrete with the basic levels at ±μΔ2/EF (μ = 1/2, 3/2, 5/2, …) with Δ the superconducting energy gap and EF the Fermi energy. However, due to the small ratio of Δ/EF in most type-II superconductors, it is very difficult to observe the discrete CdGM states, but rather a symmetric peak which appears at zero bias at the vortex center. Here we report the clear observation of these discrete energy levels of CdGM states in FeTe0.55Se0.45. The rather stable energies of these bound state peaks vs. space clearly validate our conclusion. Analysis based on the energies of these CdGM states indicates that the Fermi energy in the present system is very small.

Journal ArticleDOI
TL;DR: In this paper, the authors used EDT-treated Ag-doped PbS quantum dot quantum dots as a p-type layer to fabricate p-s quantum dot photovoltaic cells.

Journal ArticleDOI
TL;DR: In this article, the authors performed a comprehensive set of first-principles calculations to study elastic, electronic, thermodynamic and thermoelectric properties of TaCoSn using density functional theory (DFT).
Abstract: In this paper, we have performed a comprehensive set of first-principles calculations to study elastic, electronic, thermodynamic and thermoelectric properties of TaCoSn using density functional theory (DFT). Half-heusler, TaCoSn has been found to be elastically and thermodynamically stable, ductile and hard material. The Debye temperature of TaCoSn has been found to be 375.39 K. The calculated energy bands indicate that TaCoSn is an indirect band gap semiconductor and the value of gap is 1.107 eV using PBE functional and it is 1.153 eV by TB-mBJ potentials. Such small increase of band gap by TB-mBJ potential has no significant effect on the transport properties of TaCoSn. In TaCoSn, no significant spin-orbit interaction is found. The density of states at the Fermi energy is dominated by Ta-5d and Co-3d orbitals due to strong hybridization between them. We also calculate the relaxation time and lattice thermal conductivity. The lattice thermal conductivity of TaCoSn (4.95 W/mK at 300 K) is relatively small than that of other half-heusler compounds. The maximum Seebeck coefficient at 500 K is 249.41 μV/K. The obtained power factor (S2σ/τ) at 600 K is ∼12.5 × 1011 W/msK2. The calculated maximum figure of merit (ZT) is 0.73 at 600 K indicates that TaCoSn is a promising material for thermoelectric device applications.

Journal ArticleDOI
10 Aug 2018-Science
TL;DR: Two previously discussed regimes are identified: a Gross-Neveu transition to a strongly correlated Mott insulator and a semimetallic state with a logarithmically diverging Fermi velocity accurately described by the random phase approximation.
Abstract: The role of electron-electron interactions in two-dimensional Dirac fermion systems remains enigmatic. Using a combination of nonperturbative numerical and analytical techniques that incorporate both the contact and long-range parts of the Coulomb interaction, we identify the two previously discussed regimes: a Gross-Neveu transition to a strongly correlated Mott insulator and a semimetallic state with a logarithmically diverging Fermi velocity accurately described by the random phase approximation. We predict that experimental realizations of Dirac fermions span this crossover and that this determines whether the Fermi velocity is increased or decreased by interactions. We explain several long-standing mysteries, including why the observed Fermi velocity in graphene is consistently about 20% larger than values obtained from ab initio calculations and why graphene on different substrates shows different behaviors.

Journal Article
TL;DR: In this paper, it was shown that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals, which is different from surface-state quantum Hall effects from a single surface.
Abstract: The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a ``wormhole'' tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of ($d\ensuremath{-}2$)-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the $1/B$ dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, ${\mathrm{Cd}}_{3}{\mathrm{As}}_{2}$, or ${\mathrm{Na}}_{3}\mathrm{Bi}$. This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

Journal ArticleDOI
TL;DR: In this article, the authors derived rigorous upper bounds on the superfluid phase stiffness for multi-band systems, valid in any dimension, and applied these results to magic-angle twisted bilayer graphene (MA-TBG).
Abstract: Understanding the material parameters that control the superconducting transition temperature $T_c$ is a problem of fundamental importance. In many novel superconductors, phase fluctuations determine $T_c$, rather than the collapse of the pairing amplitude. We derive rigorous upper bounds on the superfluid phase stiffness for multi-band systems, valid in any dimension. This in turn leads to an upper bound on $T_c$ in two dimensions (2D), which holds irrespective of pairing mechanism, interaction strength, or order-parameter symmetry. Our bound is particularly useful for the strongly correlated regime of low-density and narrow-band systems, where mean field theory fails. For a simple parabolic band in 2D with Fermi energy $E_F$, we find that $k_BT_c \leq E_F/8$, an exact result that has direct implications for the 2D BCS-BEC crossover in ultra-cold Fermi gases. Applying our multi-band bound to magic-angle twisted bilayer graphene (MA-TBG), we find that band structure results constrain the maximum $T_c$ to be close to the experimentally observed value. Finally, we discuss the question of deriving rigorous upper bounds on $T_c$ in 3D.

Journal ArticleDOI
TL;DR: Song et al. as mentioned in this paper used the quasiparticle interference technique with scanning tunneling spectroscopy to suppress the bulk conductance in a single-layer 1T-WTe2 topological insulator.
Abstract: The two-dimensional topological insulators host a full gap in the bulk band, induced by spin–orbit coupling (SOC) effect, together with the topologically protected gapless edge states. However, it is usually challenging to suppress the bulk conductance and thus to realize the quantum spin Hall (QSH) effect. In this study, we find a mechanism to effectively suppress the bulk conductance. By using the quasiparticle interference technique with scanning tunneling spectroscopy, we demonstrate that the QSH candidate single-layer 1T’-WTe2 has a semimetal bulk band structure with no full SOC-induced gap. Surprisingly, in this two-dimensional system, we find the electron–electron interactions open a Coulomb gap which is always pinned at the Fermi energy (EF). The opening of the Coulomb gap can efficiently diminish the bulk state at the EF and supports the observation of the quantized conduction of topological edge states. The conductance from bulk bands in a topological insulator usually blurs effects arising from edge states. Here, Song et al. report a Coulomb gap opened by electron–electron interactions, which effectively suppress the bulk conductance and promote observation of topological edge states in the single-layer 1T’-WTe2.

Journal ArticleDOI
TL;DR: This work directly determines non-thermal and thermal distributions and dynamics in thin films by applying a double inversion procedure to optical pump-probe data that relates the reflectivity changes around Fermi energy to the changes in the dielectric function and in the single-electron energy band occupancies.
Abstract: Developing a fundamental understanding of ultrafast non-thermal processes in metallic nanosystems will lead to applications in photodetection, photochemistry and photonic circuitry. Typically, non-thermal and thermal carrier populations in plasmonic systems are inferred either by making assumptions about the functional form of the initial energy distribution or using indirect sensors like localized plasmon frequency shifts. Here we directly determine non-thermal and thermal distributions and dynamics in thin films by applying a double inversion procedure to optical pump-probe data that relates the reflectivity changes around Fermi energy to the changes in the dielectric function and in the single-electron energy band occupancies. When applied to normal incidence measurements our method uncovers the ultrafast excitation of a non-Fermi-Dirac distribution and its subsequent thermalization dynamics. Furthermore, when applied to the Kretschmann configuration, we show that the excitation of propagating plasmons leads to a broader energy distribution of electrons due to the enhanced Landau damping.

Journal ArticleDOI
TL;DR: These results demonstrate that the germanium nanosheets with √3 ×√3 germanene can be an ideal platform for fundamental research and for the realization of high‐speed and low‐energy‐consumption field‐effect transistors.
Abstract: 2D Dirac materials supported by nonmetallic substrates are of particular interest due to their significance for the realization of the quantum spin Hall effect and their application in field-effect transistors. Here, monolayer germanene is successfully fabricated on semiconducting germanium film with the support of a Ag(111) substrate. Its linear-like energy-momentum dispersion and large Fermi velocity are derived from the pronounced quasiparticle interference patterns in a √3 × √3 superstructure. In addition to Dirac fermion characteristics, the theoretical simulations reveal that the energy gap opens at the Brillouin zone center of the √3 × √3 restructured germanene, which is evoked by the symmetry-breaking perturbation potential. These results demonstrate that the germanium nanosheets with √3 × √3 germanene can be an ideal platform for fundamental research and for the realization of high-speed and low-energy-consumption field-effect transistors.

Journal ArticleDOI
TL;DR: The solid shows new internal degrees of freedom characterized by individual temperatures of the electron gas, the lattice and the spins, and the spin polarization separates into different parts similar to how the single temperature paradigm changed with the development of ultrafast lasers.
Abstract: Prior to the development of pulsed lasers, one assigned a single local temperature to the lattice, the electron gas, and the spins. With the availability of ultrafast laser sources, one can now drive the temperature of these reservoirs out of equilibrium. Thus, the solid shows new internal degrees of freedom characterized by individual temperatures of the electron gas ${T}_{e}$, the lattice ${T}_{l}$ and the spins ${T}_{s}$. We demonstrate an analogous behavior in the spin polarization of a ferromagnet in an ultrafast demagnetization experiment: At the Fermi energy, the polarization is reduced faster than at deeper in the valence band. Therefore, on the femtosecond time scale, the magnetization as a macroscopic quantity does not provide the full picture of the spin dynamics: The spin polarization separates into different parts similar to how the single temperature paradigm changed with the development of ultrafast lasers.

Journal ArticleDOI
TL;DR: In this article, the authors show that the Coulomb interaction can be represented by a transverse optical soft phonon, which is essential in explaining the observed anomalous isotope effect.
Abstract: Recent experiments on electron- or hole-doped ${\mathrm{SrTiO}}_{3}$ have revealed a hitherto unknown form of superconductivity in which the Fermi energy of the paired electrons is much lower than the energies of the bosonic excitations thought to be responsible for the attractive interaction. We show that this situation requires a fresh look at the problem, calling for (i) a systematic modeling of the dynamical screening of the Coulomb interaction by ionic and electronic charges, (ii) a transverse optical phonon mediated pair interaction, and (iii) a determination of the energy range over which the pairing takes place. We argue that the latter is essentially given by the limiting energy beyond which quasiparticles cease to be well-defined. The model allows us to find the transition temperature as a function of both the doping concentration and the dielectric properties of the host system, in good agreement with experimental data. The additional interaction mediated by the transverse optical soft phonon is shown to be essential in explaining the observed anomalous isotope effect. The model allows us to capture the effect of the incipient (or real) ferroelectric phase in pure or oxygen isotope substituted ${\mathrm{SrTiO}}_{3}$.

Journal ArticleDOI
TL;DR: The corner/edge energy distribution and the tunable lifetime of BPSP as well as their unprecedented capability of photon manipulation for second-order nonlinearity within the deep subwavelength scale are presented.
Abstract: Black phosphorus surface plasmon (BPSP) is a new promising candidate material for electromagnetic field confinement at the subwavelength scale. Here, we theoretically investigated the light confinement, second-order nonlinearity and lifetimes of tunable surface plasmons in nanostructured black phosphorus nanoflakes with superstrates. The grating structure can enhance the local optical field of the fundamental wave (FW) and second harmonic wave (SHW) due to the surface plasmon resonance. Based on the coupled mode theory (CMT), a theoretical model for the nanostructured black phosphorus was established to study the spectrum features of FW. The lifetimes of the plasmonic resonant modes were investigated with the finite difference time domain (FDTD) simulations and CMT. Since the permittivity of black phosphorus depends on its Fermi energy and electron scattering rate, the lifetimes of plasmonic absorption modes are tunable with both the Fermi energy and scattering rate. The intensity, wavelengths and spectral width of BPSP resonance modes and their lifetimes can be precisely controlled with the Fermi energy, scattering rate, side length and refractive index of the superstrate. The sensitivity is described by varying the refractive index of the superstrate such as an aqueous solution. We have introduced a second-order nonlinear source to investigate the SHW of nanostructured black phosphorus. This paper presents the corner/edge energy distribution and the tunable lifetime of BPSP as well as their unprecedented capability of photon manipulation for second-order nonlinearity within the deep subwavelength scale. The configuration and method are useful for research of the absorption, lifetime of light and nonlinear optical processes in black phosphorus-based optoelectronic devices, especially the modulation and sensing applications.

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TL;DR: In this paper, the authors present a consistent theory of the topological Hall effect (THE) in two-dimensional magnetic systems with a disordered array of chiral spin textures, such as magnetic skyrmions.
Abstract: We present a consistent theory of the topological Hall effect (THE) in two-dimensional magnetic systems with a disordered array of chiral spin textures, such as magnetic skyrmions. We focus on the scattering regime when the mean-free path of itinerant electrons exceeds the spin texture size, and THE arises from the asymmetric carrier scattering on individual chiral spin textures. We calculate the resistivity tensor on the basis of the Boltzmann kinetic equation taking into account the asymmetric scattering on skyrmions via the collision integral. Our theory describes both the adiabatic regime when THE arises from a spin Hall effect and the nonadiabatic scattering when THE is due to purely charge transverse currents. We analyze the dependence of THE resistivity on a chiral spin texture structure, as well as on material parameters. We discuss the crossover between spin and charge regimes of THE driven by the increase of skyrmion size, the features of THE due to the variation of the Fermi energy, and the exchange interaction strength; we comment on the sign and magnitude of THE.

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TL;DR: A dual-band independently tunable absorber consisting of a stacked graphene nanodisk and graphene layer with nanohole structure, and a metal reflector spaced by insulator layers, which results in the enhancement of absorption over a wide range of incident angles for both TE and TM polarizations.
Abstract: In this paper, we theoretically demonstrate a dual-band independently tunable absorber consisting of a stacked graphene nanodisk and graphene layer with nanohole structure, and a metal reflector spaced by insulator layers. This structure exhibits a dipole resonance mode in graphene nanodisks and a quadrupole resonance mode in the graphene layer with nanoholes, which results in the enhancement of absorption over a wide range of incident angles for both TE and TM polarizations. The peak absorption wavelength is analyzed in detail for different geometrical parameters and the Fermi energy levels of graphene. The results show that both peaks of the absorber can be tuned dynamically and simultaneously by varying the Fermi energy level of graphene nanodisks and graphene layer with nanoholes structure. In addition, one can also independently tune each resonant frequency by only changing the Fermi energy level of one graphene layer. Such a device could be used as a chemical sensor, detector or multi-band absorber.

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TL;DR: In this article, Schirotzek et al. theoretically investigated how quasiparticle properties of an attractive Fermi polaron are affected by nonzero temperature and finite impurity concentration in three dimensions and in free space.
Abstract: We theoretically investigate how quasiparticle properties of an attractive Fermi polaron are affected by nonzero temperature and finite impurity concentration in three dimensions and in free space. By applying both non-self-consistent and self-consistent many-body $T$-matrix theories, we calculate the polaron energy (including decay rate), effective mass, and residue, as functions of temperature and impurity concentration. The temperature and concentration dependencies are weak on the BCS side with a negative impurity-medium scattering length. Toward the strong attraction regime across the unitary limit, we find sizable dependencies. In particular, with increasing temperature the effective mass quickly approaches the bare mass and the residue is significantly enhanced. At temperature $T\ensuremath{\sim}0.1{T}_{F}$, where ${T}_{F}$ is the Fermi temperature of the background Fermi sea, the residual polaron-polaron interaction seems to become attractive. This leads to a notable down-shift in the polaron energy. We show that, by taking into account the temperature and impurity concentration effects, the measured polaron energy in the first Fermi polaron experiment [Schirotzek , Phys. Rev. Lett. 102, 230402 (2009)] could be better theoretically explained.