Showing papers on "Flexible electronics published in 2013"

A review of fabrication and applications of carbon nanotube film-based flexible electronics

Abstract: Flexible electronics offer a wide-variety of applications such as flexible circuits, flexible displays, flexible solar cells, skin-like pressure sensors, and conformable RFID tags. Carbon nanotubes (CNTs) are a promising material for flexible electronics, both as the channel material in field-effect transistors (FETs) and as transparent electrodes, due to their high intrinsic carrier mobility, conductivity, and mechanical flexibility. In this feature article, we review the recent progress of CNTs in flexible electronics by describing both the processing and the applications of CNT-based flexible devices. To employ CNTs as the channel material in FETs, single-walled carbon nanotubes (SWNTs) are used. There are generally two methods of depositing SWNTs on flexible substrates—transferring CVD-grown SWNTs or solution-depositing SWNTs. Since CVD-grown SWNTs can be highly aligned, they often outperform solution-processed SWNT films that are typically in the form of random network. However, solution-based SWNTs can be printed at a large-scale and at low-cost, rendering them more appropriate for manufacturing. In either case, the removal of metallic SWNTs in an effective and a scalable manner is critical, which must still be developed and optimized. Nevertheless, promising results demonstrating SWNT-based flexible circuits, displays, RF-devices, and biochemical sensors have been reported by various research groups, proving insight into the exciting possibilities of SWNT-based FETs. In using carbon nanotubes as transparent electrodes (TEs), two main strategies have been implemented to fabricate highly conductive, transparent, and mechanically compliant films—superaligned films of CNTs drawn from vertically grown CNT forests using the “dry-drawing” technique and the deposition or embedding of CNTs onto flexible or stretchable substrates. The main challenge for CNT based TEs is to fabricate films that are both highly conductive and transparent. These CNT based TEs have been used in stretchable and flexible pressure, strain, and chemical and biological sensors. In addition, they have also been used as the anode and cathode in flexible light emitting diodes, solar cells, and supercapacitors. In summary, there are a number of challenges yet to overcome to optimize the processing and performance of CNT-based flexible electronics; nonetheless, CNTs remain a highly suitable candidate for various flexible electronic applications in the near future.

Flexible solid-state supercapacitors based on three-dimensional graphene hydrogel films.

Abstract: Flexible solid-state supercapacitors are of considerable interest as mobile power supply for future flexible electronics. Graphene or carbon nanotubes based thin films have been used to fabricate flexible solid-state supercapacitors with high gravimetric specific capacitances (80–200 F/g), but usually with a rather low overall or areal specific capacitance (3–50 mF/cm2) due to the ultrasmall electrode thickness (typically a few micrometers) and ultralow mass loading, which is not desirable for practical applications. Here we report the exploration of a three-dimensional (3D) graphene hydrogel for the fabrication of high-performance solid-state flexible supercapacitors. With a highly interconnected 3D network structure, graphene hydrogel exhibits exceptional electrical conductivity and mechanical robustness to make it an excellent material for flexible energy storage devices. Our studies demonstrate that flexible supercapacitors with a 120 μm thick graphene hydrogel thin film can exhibit excellent capaciti...

Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

Abstract: Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach—termed fluid-enhanced crystal engineering (FLUENCE)—that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V−1 s−1 and 11 cm2 V−1 s−1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. Solution printing of organic semiconductors could in principle be scaled to industrial needs, yet attaining aligned single-crystals directly with this method has been challenging. By using a micropillar-patterned printing blade designed to enhance the control of crystal nucleation and growth, thin films of macroscopic, highly aligned single crystals of organic semiconductors can now be fabricated.

Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2

Abstract: We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, have been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of twodimensional crystals for applications in flexible electronics and optoelectronics.

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

Abstract: We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ∼70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.

Inkjet Printing of High Conductivity, Flexible Graphene Patterns

Abstract: The ability to print high conductivity, conformal, and flexible electrodes is an important technological challenge in printed electronics, especially for large-area formats with low cost considerations. In this Letter, we demonstrate inkjet-printed, high conductivity graphene patterns that are suitable for flexible electronics. The ink is prepared by solution-phase exfoliation of graphene using an environmentally benign solvent, ethanol, and a stabilizing polymer, ethyl cellulose. The inkjet-printed graphene features attain low resistivity of 4 mΩ·cm after a thermal anneal at 250 °C for 30 min while showing uniform morphology, compatibility with flexible substrates, and excellent tolerance to bending stresses.

High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power systems

Abstract: While there has been increasing studies of MoS2 and other two-dimensional (2D) semiconducting dichalcogenides on hard conventional substrates, experimental or analytical studies on flexible substrates has been very limited so far, even though these 2D crystals are understood to have greater prospects for flexible smart systems. In this article, we report detailed studies of MoS2 transistors on industrial plastic sheets. Transistor characteristics afford more than 100x improvement in the ON/OFF current ratio and 4x enhancement in mobility compared to previous flexible MoS2 devices. Mechanical studies reveal robust electronic properties down to a bending radius of 1 mm which is comparable to previous reports for flexible graphene transistors. Experimental investigation identifies that crack formation in the dielectric is the responsible failure mechanism demonstrating that the mechanical properties of the dielectric layer is critical for realizing flexible electronics that can accommodate high strain. Our uniaxial tensile tests have revealed that atomic-layer-deposited HfO2 and Al2O3 films have very similar crack onset strain. However, crack propagation is slower in HfO2 dielectric compared to Al2O3 dielectric, suggesting a subcritical fracture mechanism in the thin oxide films. Rigorous mechanics modeling provides guidance for achieving flexible MoS2 transistors that are reliable at sub-mm bending radius.

Fully Printed, High Performance Carbon Nanotube Thin-Film Transistors on Flexible Substrates

Abstract: Fully printed transistors are a key component of ubiquitous flexible electronics. In this work, the advantages of an inverse gravure printing technique and the solution processing of semiconductor-enriched single-walled carbon nanotubes (SWNTs) are combined to fabricate fully printed thin-film transistors on mechanically flexible substrates. The fully printed transistors are configured in a top-gate device geometry and utilize silver metal electrodes and an inorganic/organic high-κ (∼17) gate dielectric. The devices exhibit excellent performance for a fully printed process, with mobility and on/off current ratio of up to ∼9 cm2/(V s) and 105, respectively. Extreme bendability is observed, without measurable change in the electrical performance down to a small radius of curvature of 1 mm. Given the high performance of the transistors, our high-throughput printing process serves as an enabling nanomanufacturing scheme for a wide range of large-area electronic applications based on carbon nanotube networks.

Transient, Biocompatible Electronics and Energy Harvesters Based on ZnO

Abstract: The combined use of ZnO, Mg, MgO, and silk provides routes to classes of thin-film transistors and mechanical energy harvesters that are soluble in water and biofluids. Experimental and theoretical studies of the operational aspects and dissolution properties of this type of transient electronics technology illustrate its various capabilities. Application opportunities range from resorbable biomedical implants, to environmentally dissolvable sensors, and degradable consumer electronics.

Direct Desktop Printed-Circuits-on-Paper Flexible Electronics

Abstract: There currently lacks of a way to directly write out electronics, just like printing pictures on paper by an office printer. Here we show a desktop printing of flexible circuits on paper via developing liquid metal ink and related working mechanisms. Through modifying adhesion of the ink, overcoming its high surface tension by dispensing machine and designing a brush like porous pinhead for printing alloy and identifying matched substrate materials among different papers, the slightly oxidized alloy ink was demonstrated to be flexibly printed on coated paper, which could compose various functional electronics and the concept of Printed-Circuits-on-Paper was thus presented. Further, RTV silicone rubber was adopted as isolating inks and packaging material to guarantee the functional stability of the circuit, which suggests an approach for printing 3D hybrid electro-mechanical device. The present work paved the way for a low cost and easygoing method in directly printing paper electronics.

Biodegradable transparent substrates for flexible organic-light-emitting diodes

Abstract: Electronics on flexible and transparent substrates have received muchinterest duetotheirnew functionalitiesand high-speedroll-toroll manufacturing processes. The properties of substrates are crucial, including flexibility, surface roughness, optical transmittance, mechanical strength, maximum processing temperature, etc. Although plastic substrates have been used widely in flexible macroelectronics, there is still a need for next-generation sustainable, high-performance substrates which are thermally stable with tunable optical properties and a higher handling temperature. In this communication, we focus on cellulose-based transparent, biodegradablesubstrates incorporatingeither nanopaperora regenerated cellulose film (RCF). We found that both their optical and mechanical properties are dramatically different due to the difference of their buildingblocks. Highly flexibleorganic-light-emitting diodes (OLEDs) are also demonstrated on the biodegradable substrates, paving the way for next-generation green and flexible electronics.

A Review of Carbon Nanotube- and Graphene-Based Flexible Thin-Film Transistors

Abstract: Carbon nanotubes (CNTs) and graphene have attracted great attention for numerous applications for future flexible electronics, owing to their supreme properties including exceptionally high electronic conductivity and mechanical strength. Here, the progress of CNT- and graphene-based flexible thin-film transistors from material preparation, device fabrication techniques to transistor performance control is reviewed. State-of-the-art fabrication techniques of thin-film transistors are divided into three categories: solid-phase, liquid-phase, and gas-phase techniques, and possible scale-up approaches to achieve realistic production of flexible nanocarbon-based transistors are discussed. In particular, the recent progress in flexible all-carbon nanomaterial transistor research is highlighted, and this all-carbon strategy opens up a perspective to realize extremely flexible, stretchable, and transparent electronics with a relatively low-cost and fast fabrication technique, compared to traditional rigid silicon, metal and metal oxide electronics.

Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes.

Abstract: A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio (>10(4)) with an average field effect mobility of ∼4.7 cm(2) V(-1) s(-1), all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS2 /graphene interface, which is comparable to the MoS2 /metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.

Package-free flexible organic solar cells with graphene top electrodes.

Abstract: Package-free flexible organic solar cells are fabricated with multilayer graphene as top transparent electrodes, which show the highest power conversion efficiency of about 3.2% and excellent flexibility and bending stability. The devices also show good air stability, indicating that multilayer graphene is a promising environmental barrier that can protect the organic solar cells from air contamination.

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

Abstract: Two-dimensional (2D) layered semiconductors are very promising for post-silicon ultrathin channels and flexible electronics due to the remarkable dimensional and mechanical properties. Besides molybdenum disulfide (MoS2), the first recognized 2D semiconductor, it is also important to explore the wide spectrum of layered metal chalcogenides (LMCs) and to identify possible compounds with high performance. Here we report the fabrication of high-performance top-gated field-effect transistors (FETs) and related logic gates from monolayer tin disulfide (SnS2), a non-transition metal dichalcogenide. The measured carrier mobility of our monolayer devices reaches 50 cm2 V−1 s−1, much higher than that of the back-gated counterparts (∼1 cm2 V−1 s−1). Based on a direct-coupled FET logic technique, advanced Boolean logic gates and operations are also implemented, with a voltage gain of 3.5 and output swing of >90% for the NOT and NOR gates, respectively. The superior electrical and integration properties make monolayer SnS2 a strong candidate for next-generation atomic electronics.

Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics

Abstract: Epitaxial lift-off process enables the separation of III-V device layers from gallium arsenide substrates and has been extensively explored to avoid the high cost of III-V devices by reusing the substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready condition. Here we present an epitaxial lift-off scheme that minimizes the amount of post-etching residues and keeps the surface smooth, leading to direct reuse of the gallium arsenide substrate. The successful direct substrate reuse is confirmed by the performance comparison of solar cells grown on the original and the reused substrates. Following the features of our epitaxial lift-off process, a high-throughput technique called surface tension-assisted epitaxial lift-off was developed. In addition to showing full wafer gallium arsenide thin film transfer onto both rigid and flexible substrates, we also demonstrate devices, including light-emitting diode and metal-oxide-semiconductor capacitor, first built on thin active layers and then transferred to secondary substrates.

Graphene-P(VDF-TrFE) multilayer film for flexible applications.

Abstract: A flexible, transparent acoustic actuator and nanogenerator based on graphene/P(VDF-TrFE)/graphene multilayer film is demonstrated. P(VDF-TrFE) is used as an effective doping layer for graphene and contributes significantly to decreasing the sheet resistance of graphene to 188 ohm/sq. The potentiality of graphene/P(VDF-TrFE)/graphene multilayer film is realized in fabricating transparent, flexible acoustic devices and nanogenerators to represent its functionality. The acoustic actuator shows good performance and sensitivity over a broad range of frequency. The output voltage and the current density of the nanogenerator are estimated to be ∼3 V and ∼0.37 μAcm–2, respectively, upon the application of pressure. These values are comparable to those reported earlier for ZnO- and PZT-based nanogenerators. Finally, the possibility of rollable devices based on graphene/P(VDF-TrFE)/graphene structure is also demonstrated under a dynamic mechanical loading condition.

High‐Performance Organic‐Inorganic Hybrid Photodetectors Based on P3HT:CdSe Nanowire Heterojunctions on Rigid and Flexible Substrates

Abstract: Organic-inorganic hybrid photoelectric devices draw considerable attention because of their unique features by combining the relatively low ionization potential of the organic molecules and the high electron affi nity of inorganic semiconductors. Hybrid organic-inorganic poly(3-hexylthiophene) (P3HT):CdSe nanowire heterojunction photodetectors are fi rst demonstrated on silicon substrates, exhibiting a greatly enhanced photocurrent, a fast response, and a recovery time shorter than 0.1 s. Flexible hybrid photodetectors with excellent mechanical fl exibility and stability are also fabricated on both poly(ethylene terephthalate) (PET) substrates and printing paper. The fl exible devices are successfully operated under bending up to almost 180 ° and show an extremely high on/off switching ratio (larger than 500), a fast time response (about 10 ms), and excellent wavelength-dependence, which are very desirable properties for its practical application in high-frequency or high-speed fl exible electronic devices.

Flexible electronics: Sophisticated skin

Abstract: Advances in materials science and layout design have enabled the realization of flexible and multifunctional electronic devices. Two demonstrations of electronic skins, which combine temperature and pressure sensing with integrated thermal actuators and organic displays, unveil the potential of these devices for robotics and clinical applications.

Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate.

Abstract: Recently, transition metal dichalcogenides (TMDCs) have attracted interest thanks to their large field effective mobility (>100 cm(2)/V · s), sizable band gap (around 1-2 eV), and mechanical properties, which make them suitable for high performance and flexible electronics. In this paper, we present a process scheme enabling the fabrication and transfer of few-layers MoS2 thin film transistors from a silicon template to any arbitrary organic or inorganic and flexible or rigid substrate or support. The two-dimensional semiconductor is mechanically exfoliated from a bulk crystal on a silicon/polyvinyl alcohol (PVA)/polymethyl methacrylane (PMMA) stack optimized to ensure high contrast for the identification of subnanometer thick flakes. Thin film transistors (TFTs) with structured source/drain and gate electrodes are fabricated following a designed procedure including steps of UV lithography, wet etching, and atomic layer deposited (ALD) dielectric. Successively, after the dissolution of the PVA sacrificial layer in water, the PMMA film, with the devices on top, can be transferred to another substrate of choice. Here, we transferred the devices on a polyimide plastic foil and studied the performance when tensile strain is applied parallel to the TFT channel. We measured an electron field effective mobility of 19 cm(2)/(V s), an I(on)/I(off)ratio greater than 10(6), a gate leakage current as low as 0.3 pA/μm, and a subthreshold swing of about 250 mV/dec. The devices continue to work when bent to a radius of 5 mm and after 10 consecutive bending cycles. The proposed fabrication strategy can be extended to any kind of 2D materials and enable the realization of electronic circuits and optical devices easily transferrable to any other support.

Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

Abstract: In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 A thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

Flexible Multi‐Colored Electrochromic and Volatile Polymer Memory Devices Derived from Starburst Triarylamine‐Based Electroactive Polyimide

Abstract: Flexible multi-colored electrochromic and volatile memory devices are fabricated from a solution-processable electroactive aromatic polyimide with starburst triarylamine unit. The polyimide prepared by the chemical imidization was highly soluble in many organic solvents and showed useful levels of thermal stability associated with high glass-transition temperatures. The polyimide with strong electron-donating capability possesses static random access memory behavior and longer retention time than other 6FDA-based polyimides. The differences of the highest-occupied and lowest unoccupied molecular orbital levels among these polyimides with different electrondonating moieties are investigated and the effect on the memory behavior is demonstrated. The polymer fi lm shows reversible electrochemical oxidation and electrochromism with high contrast ratio both in the visible range and near-infrared region, which also exhibits high coloration effi ciency, low switching time, and the outstanding stability for long-term electrochromic operation. The highly stable electrochromism and interesting volatile memory performance are promising properties for the practical fl exible electronics applications in the future.

Doped organic transistors operating in the inversion and depletion regime

Abstract: The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer. Inversion type transistors – which are widely used in silicon-based industries – are thought to not be obtainable in organic devices. Lussem et al.realize the first inversion organic field-effect transistor by doping at the source and drain contacts without degrading its ON/OFF ratio.

A flexible high potential printed battery for powering printed electronics

Abstract: Mechanically flexible arrays of alkaline electrochemical cells fabricated using stencil printing onto fibrous substrates are shown to provide the necessary performance characteristics for driving ink-jet printed circuits. Due to the dimensions and material set currently required for reliable low-temperature print processing of electronic devices, a battery potential greater than that sourced by single cells is typically needed. The developed battery is a series interconnected array of 10 low resistance Zn-MnO2 alkaline cells, giving an open circuit potential of 14 V. This flexible battery is used to power an ink-jet printed 5-stage complementary ring oscillator based on organic semiconductors.

Inkjet Printing of Carbon Nanotubes.

Abstract: In an attempt to give a brief introduction to carbon nanotube inkjet printing, this review paper discusses the issues that come along with preparing and printing carbon nanotube ink. Carbon nanotube inkjet printing is relatively new, but it has great potential for broad applications in flexible and printable electronics, transparent electrodes, electronic sensors, and so on due to its low cost and the extraordinary properties of carbon nanotubes. In addition to the formulation of carbon nanotube ink and its printing technologies, recent progress and achievements of carbon nanotube inkjet printing are reviewed in detail with brief discussion on the future outlook of the technology.

Mechanically tunable terahertz metamaterials

Abstract: Electromagnetic device design and flexible electronics fabrication are combined to demonstrate mechanically tunable metamaterials operating at terahertz frequencies. Each metamaterial comprises a planar array of resonators on a highly elastic polydimethylsiloxane substrate. The resonance of the metamaterials is controllable through substrate deformation. Applying a stretching force to the substrate changes the inter-cell capacitance and hence the resonance frequency of the resonators. In the experiment, greater than 8% of the tuning range is achieved with good repeatability over several stretching-relaxing cycles. This study promises applications in remote strain sensing and other controllable metamaterial-based devices.

Highly conductive, flexible, polyurethane-based adhesives for flexible and printed electronics

Abstract: Flexible interconnects are one of the key elements in realizing next-generation flexible electronics. While wire bonding interconnection materials are being deployed and discussed widely, adhesives to support flip-chip and surface-mount interconnections are less commonly used and reported. A polyurethane (PU)-based electrically conductive adhesive (ECA) is developed to meet all the requirements of flexible interconnects, including an ultralow bulk resistivity of ≈1.0 × 10−5 Ω cm that is maintained during bending, rolling, and compressing, good adhesion to various flexible substrates, and facile processing. The PU-ECA enables various interconnection techniques in flexible and printed electronics: it can serve as a die-attach material for flip-chip, as vertical interconnect access (VIA)-filling and polymer bump materials for 3D integration, and as a conductive paste for wearable radio-frequency devices.

Silver nanowire/optical adhesive coatings as transparent electrodes for flexible electronics.

Abstract: We present new flexible, transparent, and conductive coatings composed of an annealed silver nanowire network embedded in a polyurethane optical adhesive. These coatings can be applied to rigid glass substrates as well as to flexible polyethylene terephthalate (PET) plastic and elastomeric polydimethylsiloxane (PDMS) substrates to produce highly flexible transparent conductive electrodes. The coatings are as conductive and transparent as indium tin oxide (ITO) films on glass, but they remain conductive at high bending strains and are more durable to marring and scratching than ITO. Coatings on PDMS withstand up to 76% tensile strain and 250 bending cycles of 15% strain with a negligible increase in electrical resistance. Since the silver nanowire network is embedded at the surface of the optical adhesive, these coatings also provide a smooth surface (root mean squared surface roughness <10 nm), making them suitable as transparent conducting electrodes in flexible light-emitting electrochemical cells. Thes...

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

Abstract: Despite the widespread interest in graphene electronics over the past decade, high-performance graphene field-effect transistors (GFETs) on flexible substrates have been rarely achieved, even though this atomic sheet is widely understood to have greater prospects for flexible electronic systems. In this article, we report detailed studies on the electrical and mechanical properties of vapor synthesized high-quality monolayer graphene integrated onto flexible polyimide substrates. Flexible graphene transistors with high-k dielectric afforded intrinsic gain, maximum carrier mobilities of 3900 cm2/V·s, and importantly, 25 GHz cutoff frequency, which is more than a factor of 2.5 times higher than prior results. Mechanical studies reveal robust transistor performance under repeated bending, down to 0.7 mm bending radius, whose tensile strain is a factor of 2–5 times higher than in prior studies. In addition, integration of functional coatings such as highly hydrophobic fluoropolymers combined with the self-pas...

Fast flexible electronics with strained silicon nanomembranes

Abstract: Fast flexible electronics operating at radio frequencies (>1 GHz) are more attractive than traditional flexible electronics because of their versatile capabilities, dramatic power savings when operating at reduced speed and broader spectrum of applications. Transferrable single-crystalline Si nanomembranes (SiNMs) are preferred to other materials for flexible electronics owing to their unique advantages. Further improvement of Si-based device speed implies significant technical and economic advantages. While the mobility of bulk Si can be enhanced using strain techniques, implementing these techniques into transferrable single-crystalline SiNMs has been challenging and not demonstrated. The past approach presents severe challenges to achieve effective doping and desired material topology. Here we demonstrate the combination of strained- NM-compatible doping techniques with self-sustained-strain sharing by applying a strain-sharing scheme between Si and SiGe multiple epitaxial layers, to create strained print-transferrable SiNMs. We demonstrate a new speed record of Si-based flexible electronics without using aggressively scaled critical device dimensions.