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Samuel Graham

Researcher at Georgia Institute of Technology

Publications -  361
Citations -  12423

Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.

Papers
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Proceedings ArticleDOI

Electro-Thermo-Mechanical Transient Modeling of Stress Development in AlGaN/GaN High Electron Mobility Transistors (HEMTs) (Postprint)

TL;DR: In this article, a coupled small-scale electrothermal model for characterizing AlGaN/GaN HEMTs under direct current (DC) and alternating current (AC) power conditions for various duty cycles was presented.
Journal ArticleDOI

Investigating the thermal response of a micro-optical shutter

TL;DR: In this paper, the thermal analysis of a fully integrated micro-switch for surety applications is presented, where the authors focus on the temperature increase of a micromachined optical shutter with spot heating from a solid-state laser.
Patent

Thiophene sulfonamide antiglaucoma agents

TL;DR: Aryl (or aralkyl)-sulfonylthiophene-2-sulfonamides containing a basic functional group as a substituent are efficacious in the treatment of elevated intraocular pressure and glaucoma following topical ocular administration as mentioned in this paper.
Journal ArticleDOI

Impact of the thermal environment on the analog temporal response of HfOx-based neuromorphic devices

TL;DR: In this paper, the role of the substrate thermal conductivity on the analog performance was investigated at biologically realistic pulse widths, and the results were validated by a COMSOL multiphysics® model that models the flow of heat in both samples.
Journal ArticleDOI

The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells

TL;DR: In this article, the authors study the effects of modifying indium tin oxide electrodes with ultrathin titania (TiO2) layers grown via plasma-enhanced atomic layer deposition (PE-ALD).