S
Samuel Graham
Researcher at Georgia Institute of Technology
Publications - 361
Citations - 12423
Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.
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Understanding Phonon Transport Properties Using Classical Molecular Dynamics Simulations
Murali Gopal Muraleedharan,Kiarash Gordiz,Andrew Rohskopf,Spencer Wyant,Zhe Cheng,Samuel Graham,Asegun Henry +6 more
TL;DR: In this paper, a comprehensive review of classical molecular dynamics based formalisms for extracting thermal transport properties: thermal conductivity and thermal interfacial conductance and the effects of various structural, compositional, and chemical parameters on these properties.
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Formation of Air Stable Graphene p-n-p Junctions Using an Amine-Containing Polymer Coating
TL;DR: In this paper, an ultrathin layer of a polymer containing simple aliphatic amine groups, polyethylenimine ethoxylated (PEIE), is deposited on a back-gated field effect graphene device to form graphene p-n-p junctions.
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Monitoring the Joule heating profile of GaN/SiC high electron mobility transistors via cross-sectional thermal imaging
TL;DR: In this paper, the authors proposed a new cross-sectional imaging technique to map the vertical temperature distribution in gallium nitride (HEMTs) by combining advanced cross-sectioning processing with the recently developed near bandgap transient thermoreflectance imaging technique.
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Thermal rectification in thin films driven by gradient grain microstructure
TL;DR: In this article, a thermal rectifier that is driven by the gradient grain structure and the inherent gradient in thermal properties as found in CVD diamond films is presented. And the authors show that the columnar grain microstructure makes CVD materials unique candidates for mesoscale thermal rectifiers without a sharp temperature change.
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Liquid-Cooled Aluminum Silicon Carbide Heat Sinks for Reliable Power Electronics Packages
Darshan G. Pahinkar,Lauren Boteler,Dimeji Ibitayo,Sreekant Narumanchi,Paul Paret,Douglas DeVoto,Joshua Major,Samuel Graham +7 more
TL;DR: In this paper, the authors investigated the feasibility of a novel integrated package assembly, which consists of a copper circuit layer on an aluminum nitride (AlN) dielectric layer that is bonded to an aluminum silicon carbide (AlSiC) substrate.