S
Samuel Graham
Researcher at Georgia Institute of Technology
Publications - 361
Citations - 12423
Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.
Papers
More filters
Patent
Benodiazepine spirohydantoin cgrp receptor antagonists
TL;DR: In this paper, the authors present a list of compounds that are antagonists of CGRP receptors and that are useful in the treatment or prevention of diseases in which the CGRPs is involved, such as headache, migraine and cluster headache.
Journal ArticleDOI
Modeling and analysis for thermal management in gallium oxide field-effect transistors
Chao Yuan,Yuewei Zhang,Robert H. Montgomery,Samuel Kim,Jingjing Shi,Akhil Mauze,Takeki Itoh,James S. Speck,Samuel Graham +8 more
TL;DR: In this article, the authors explore the limits of various die-level thermal management schemes on a β-Ga2O3 metal-semiconductor field effect transistor using numerical simulations, along with guidance for material selection to enable the most effective thermal solutions.
Journal ArticleDOI
Thermal characterization of gallium nitride p-i-n diodes
James Dallas,Georges Pavlidis,Bikramjit Chatterjee,James Spencer Lundh,Mi-Hee Ji,Jeong Hyun Kim,Tsung-Ting Kao,Theeradetch Detchprohm,Russell D. Dupuis,Shyh-Chiang Shen,Samuel Graham,Sukwon Choi +11 more
TL;DR: In this paper, various thermal characterization techniques and multi-physics modeling were applied to understand the thermal characteristics of GaN vertical and quasi-vertical power diodes Optical thermography techniques typically used for lateral GaN device temperature assessment including infrared thermography, thermoreflectance thermal imaging, and Raman thermometry were employed to determine if each technique is capable of providing insight into the thermal properties of vertical devices.
Posted Content
Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces
TL;DR: In this article, the authors measured the thermal transport across the interfaces of Ga2O3 exfoliated onto a single crystal diamond and showed that the van der Waals bonded temperature of the diamond is 17 MWm2K1, which is comparable to the TBC of several physical vapor deposited metals on diamond.
Journal ArticleDOI
Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
Georges Pavlidis,Spyridon Pavlidis,Eric R. Heller,Elizabeth A. Moore,Ramakrishna Vetury,Samuel Graham +5 more
TL;DR: In this article, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors under various bias conditions.