S
Samuel Graham
Researcher at Georgia Institute of Technology
Publications - 361
Citations - 12423
Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.
Papers
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Journal ArticleDOI
High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films.
Shafkat Bin Hoque,Yee Rui Koh,Jeffrey L. Braun,Abdullah Mamun,Zeyu Liu,Kenny Huynh,Michael E. Liao,Kamal Hussain,Zhe Cheng,Eric R. Hoglund,David H. Olson,John A. Tomko,Kiumars Aryana,Roisul Hasan Galib,John T. Gaskins,Mirza Elahi,Zayd C. Leseman,James M. Howe,Tengfei Luo,Samuel Graham,Mark S. Goorsky,Asif Khan,Patrick E. Hopkins +22 more
TL;DR: In this article, the in-plane thermal conductivities of 3.05, 3.75, and 6 μm thick aluminum nitride (AlN) films measured via steady-state thermoreflectance were reported.
Journal ArticleDOI
Raman Thermometry of Polysilicon Microelectro-mechanical Systems in the Presence of an Evolving Stress
TL;DR: In this paper, the use of Raman Stokes peak location and linewidth broadening methods were evaluated for thermometry applications of polysilicon microheaters subjected to evolving thermal stresses.
Journal ArticleDOI
A Review of Carbon Nanotube Ensembles as Flexible Electronics and Advanced Packaging Materials
TL;DR: In this paper, an overview of recent research on the fabrication, characterization and modeling of carbon nanotube (CNT) networks or ensembles for three emerging applications: thin-film transistors for flexible electronics, interface materials for thermal management and transparent electrodes for organic photovoltaics or light emitting diodes.
Patent
Method for removing carbon contamination from optic surfaces
TL;DR: In this paper, a method using atomic hydrogen for removing carbon contamination from optical surfaces was proposed, which is particularly useful in removing carbon and hydrocarbon contamination in-situ from the surface of the multilayer optics used for extreme ultraviolet lithography (EUVL) without degrading the quality of the optical surface.
Journal ArticleDOI
Experimental observation of localized interfacial phonon modes.
Zhe Cheng,Zhe Cheng,Ruiyang Li,Xingxu Yan,Glenn G. Jernigan,Jingjing Shi,Michael E. Liao,Nicholas J. Hines,Chaitanya Gadre,Juan Carlos Idrobo,Eungkyu Lee,Karl D. Hobart,Mark S. Goorsky,Xiaoqing Pan,Tengfei Luo,Samuel Graham +15 more
TL;DR: In this article, a combination of Raman spectroscopy and high-energy-resolution electron energy-loss spectrograms was used to detect localized phonon modes at the interface of Si-Ge interfaces.