S
Samuel Graham
Researcher at Georgia Institute of Technology
Publications - 361
Citations - 12423
Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.
Papers
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Journal ArticleDOI
29.3: Invited Paper: The Mechanical Reliability of Flexible ALD Barrier Films
Anuradha Bulusu,Henrik Behm,Farzad Sadeghi-Tohidi,Hendrick Bahre,E. K. Baumert,David Samet,Christian Hopmann,Jörg Winter,Olivier N. Pierron,Samuel Graham +9 more
TL;DR: In this paper, the authors present the results of mechanical testing that reveals the onset crack strain and fatigue crack growth of TiO2 and Al2O3 films deposited by atomic layer deposition.
Proceedings ArticleDOI
Thermal simulation of heterogeneous GaN/ InP/silicon 3DIC stacks
T. Robert Harris,Eric J. Wyers,Lee Wang,Samuel Graham,Georges Pavlidis,Paul D. Franzon,W. Rhett Davis +6 more
TL;DR: Preliminary results are presented which examine the thermal performance of the integration of materials such as GaN, InP, SiGe, and Si and two methods for building up the model of a test chip are compared.
Journal ArticleDOI
High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films
Yee Rui Koh,Shafkat Bin Hoque,Habib Ahmad,David H. Olson,Zeyu Liu,Jingjing Shi,Yekan Wang,Kenny Huynh,Eric R. Hoglund,Kiumars Aryana,James M. Howe,Mark S. Goorsky,Samuel Graham,Tengfei Luo,Jennifer K. Hite,W. Alan Doolittle,Patrick E. Hopkins +16 more
TL;DR: In this paper, the thermal conductivities of homoepitaxial GaN films were measured using two different techniques (metal-organic chemical vapor deposition and molecular beam epitaxy) and measured via two different temperature-dependent thermal conductivity measurements.
Journal ArticleDOI
Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200 °C.
TL;DR: The underlying fatigue mechanism appears to result from the presence of compressive stresses and a rough coating–substrate interface and may be related to the improved stability of the ALD titania coating with water compared to ALD alumina.
Proceedings ArticleDOI
Thermometry of Polycrystalline Silicon Structures Using Raman Spectroscopy
Mark R. Abel,Samuel Graham +1 more
TL;DR: In this paper, the Stokes Raman shift and Stokes to anti-Stokes intensity ratio were used to calculate the temperature on simple polysilicon structures and the effects of thermal stresses on the temperature measurements.