S
Samuel Graham
Researcher at Georgia Institute of Technology
Publications - 361
Citations - 12423
Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.
Papers
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Journal ArticleDOI
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Sukwon Choi,Samuel Graham,Srabanti Chowdhury,Eric R. Heller,Marko J. Tadjer,Gilberto Moreno,Sreekant Narumanchi +6 more
TL;DR: In this article, the need and process for the "electro-thermal co-design" of laterally configured ultra-wide bandgap (UWBG) electronic devices and thermal characterization methods, device thermal modeling practices, and both device and package-level thermal management solutions are discussed.
Journal ArticleDOI
Bulk-like Intrinsic Phonon Thermal Conductivity of Micrometer-Thick AlN Films.
Yee Rui Koh,Zhe Cheng,Abdullah Mamun,Shafkat Bin Hoque,Zeyu Liu,Tingyu Bai,Kamal Hussain,Michael E. Liao,Ruiyang Li,John T. Gaskins,Ashutosh Giri,John A. Tomko,Jeffrey L. Braun,Mikhail Gaevski,Eungkyu Lee,Luke Yates,Mark S. Goorsky,Tengfei Luo,Asif Khan,Samuel Graham,Patrick E. Hopkins +20 more
TL;DR: The measured thermal conductivities in high-quality AlN thin films are found to be constant, and similar to bulk AlN, regardless of heat penetration depth, film thickness or laser spot size, even when these characteristic length scales are less than the mean free paths of a considerable portion of thermal phonons.
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Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces
Zhe Cheng,Yee Rui Koh,Habib Ahmad,Renjiu Hu,Jingjing Shi,Michael E. Liao,Yekan Wang,Tingyu Bai,Ruiyang Li,Eungkyu Lee,Evan A. Clinton,Christopher M. Matthews,Zachary Engel,Luke Yates,Tengfei Luo,Mark S. Goorsky,W. Alan Doolittle,Zhiting Tian,Patrick E. Hopkins,Samuel Graham +19 more
TL;DR: In this article, the authors compare experimental and calculated thermal boundary conductance across high-quality harmonic-matched epitaxial Al-sapphire interfaces and find that elastic phonon processes dominate the ultra-clean interfaces.
Posted Content
Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices
TL;DR: In this paper, two modified room temperature surface activated bonding techniques are used to bond GaN and single crystal diamond with different interlayer thicknesses, and a relatively large TBC of the GaN-diamond interfaces with a 4nm interlayer was observed.
Journal ArticleDOI
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
Neeraj Nepal,D. Scott Katzer,Brian P. Downey,Virginia D. Wheeler,Luke O. Nyakiti,David F. Storm,Matthew T. Hardy,Jaime A. Freitas,Eric N. Jin,Diego Vaca,Luke Yates,Samuel Graham,Satish Kumar,David J. Meyer +13 more
TL;DR: In this paper, the authors reported the heteroepitaxial growth of β-Ga2O3 films on high thermal conductivity 4H-SiC substrates by molecular beam epitaxy (MBE) at 650°C.