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Samuel Graham

Researcher at Georgia Institute of Technology

Publications -  361
Citations -  12423

Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.

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Integration of polycrystalline Ga2O3 on diamond for thermal management

TL;DR: In this paper, the authors measured the thermal boundary conductance (TBC) of the Ga2O3-diamond interfaces with different interface pretreatments and showed that a high TBC can be obtained from strong interfacial bonds across the interfaces.
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Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2

TL;DR: The unprecedented uniformity of the few-layer p-type WSe2 with wafer-scale thickness and electrical uniformity is synthesized through direct selenization of thin films of e-beam evaporated W on SiO2 substrates.
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Thermal Metrology of Silicon Microstructures Using Raman Spectroscopy

TL;DR: In this article, the temperature dependence of the Stokes Raman peak location and Stokes to anti-Stokes intensity ratio calibrated the measurements, and it was possible to assess both temperature and thermal stress behavior with resolution near 1mum.
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Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management

TL;DR: In this article, the thermal boundary conductance (TBC) of the Ga2O3-diamond interfaces were measured by TDTR and it was shown that a high TBC can be obtained from strong interfacial bonds across the diamond interfaces.
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Characterization of Metallically Bonded Carbon Nanotube-Based Thermal Interface Materials Using a High Accuracy 1D Steady-State Technique

TL;DR: In this article, the authors developed functional nTIMs based on short, verticallyaligned carbon nanotubes (CNTs) grown on both sides of a thin interposer foil and interfaced with substrate materials via metallic bonding.