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Proceedings ArticleDOI

80Kb 10ns read cycle logic Embedded High-K charge trap Multi-Time-Programmable Memory scalable to 14nm FIN with no added process complexity

TLDR
An 80Kb logic Embedded Multi-Time Programmable Memory (MTPM) employs charge trapping and de-trapping behavior in 32nm/22nm High-K transistor, resulting in no added process complexity.
Abstract
An 80Kb logic Embedded Multi-Time Programmable Memory (MTPM) employs charge trapping and de-trapping behavior in 32nm/22nm High-K transistor, resulting in no added process complexity. Multi-step verification with overwrite protection employs block-write and signal margin degradation (∼30%) to satisfy 10 year retention at 105° C.

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An Analog Neural Network Computing Engine using CMOS-Compatible Charge-Trap-Transistor (CTT)

TL;DR: In this paper, an analog neural network computing engine based on CMOS-compatible charge-trap transistor (CTT) is proposed, which is composed of a scalable CTT multiplier array and energy efficient analog-digital interfaces.
Proceedings ArticleDOI

Demonstration of Analog Compute-In-Memory Using the Charge-Trap Transistor in 22 FDX Technology

TL;DR: In this paper , the charge-trap transistor (CTT) has been proposed to overcome the low on/off ratio, large IR drop, limited retention capability, and additional process complexity for embedding in commercial CMOS logic.
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